Michael Shur

Bio: Michael Shur is an academic researcher from Rensselaer Polytechnic Institute. The author has contributed to research in topics: Terahertz radiation & Field-effect transistor. The author has an hindex of 102, co-authored 1601 publications receiving 51697 citations. Previous affiliations of Michael Shur include Russian Academy of Sciences & University of Minnesota.

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

Abstract: Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si-1-xGe-x) (F. Schaffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.

Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current.

Abstract: We demonstrate that electrons in a ballistic field effect transistor behave as a fluid similar to shallow water. Phenomena similar to wave and soliton propagation, hydraulic jump, and others should take place in this electron fluid. We show that a relatively slow electron flow should be unstable because of plasma wave amplification due to the reflection from the device boundaries. This provides a new mechanism for the generation of tunable far infrared electromagnetic radiation.

Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid

Abstract: We show that a short channel High Electron Mobility Transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. This response can be used for new types of detectors, mixers, and multipliers. These devices should operate at much higher frequencies than conventional, transit-time limited devices, since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broadband detector for frequencies up to several tens of terahertz.

Threshold switching in chalcogenide-glass thin films

Abstract: The application of sufficiently high electric fields to any material eventually results in deviations from linearity in the observed current-voltage I(V) characteristic. There are two general classes of explanations for such non-Ohmic effects— thermal and electronic. Thermal effects arise because the electrons accelerated by the field always emit phonons in an attempt to return to equilibrium. Electronic effects are due to changes in the response of the charged carriers to high applied fields. In general, both effects must be considered in any quantitative analysis, and the two can produce a coupled response ofter called “electrothermal.” The use of the terminology electrothermal encompasses predominantly thermal and predominantly electronic processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important. In a discussion of the physical mechanism in a particular sample, the major parameters controlling its operation must be identified and separated out from the less significant features.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Abstract: Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...