Michela Uslenghi

Bio: Michela Uslenghi is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Point spread function & Radiation. The author has an hindex of 5, co-authored 5 publications receiving 169 citations.

Proton radiation damage in p-channel CCDs fabricated on high- resistivity silicon

Abstract: P-channel backside illuminated silicon charge-coupled devices (CCDs) were developed and fabricated on high-resistivity n-type silicon. The devices have been exposed up to 1 /spl times/ 10/sup 11/ protons/cm/sup 2/ at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for space missions of long duration.

Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

Abstract: Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800/spl times/1100, 15 /spl mu/m pixel, 280 /spl mu/m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs - eScholarship

Abstract: Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800x1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

Proton radiation damage in high-resistivity n-type silicon CCDs

Abstract: A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

LBNL four-side buttable CCD package development

Abstract: We have developed a precision, 4-side buttable CCD package for 2kx2k and 2kx4k format devices with minimal mechanical stress on the CCD, excellent thermal properties, reliable electrical connectivity, and shim-free mounting. We report on the package design, assembly and quality assurance procedures, measurements of packaged device flatness and flatness excursions when cooled from room temperature to 140 K, package performance and plans for future development.

The Multi-object, Fiber-fed Spectrographs for the Sloan Digital Sky Survey and the Baryon Oscillation Spectroscopic Survey

Abstract: We present the design and performance of the multi-object fiber spectrographs for the Sloan Digital Sky Survey (SDSS) and their upgrade for the Baryon Oscillation Spectroscopic Survey (BOSS). Originally commissioned in Fall 1999 on the 2.5 m aperture Sloan Telescope at Apache Point Observatory, the spectrographs produced more than 1.5 million spectra for the SDSS and SDSS-II surveys, enabling a wide variety of Galactic and extra-galactic science including the first observation of baryon acoustic oscillations in 2005. The spectrographs were upgraded in 2009 and are currently in use for BOSS, the flagship survey of the third-generation SDSS-III project. BOSS will measure redshifts of 1.35 million massive galaxies to redshift 0.7 and Lyα absorption of 160,000 high redshift quasars over 10,000 deg2 of sky, making percent level measurements of the absolute cosmic distance scale of the universe and placing tight constraints on the equation of state of dark energy. The twin multi-object fiber spectrographs utilize a simple optical layout with reflective collimators, gratings, all-refractive cameras, and state-of-the-art CCD detectors to produce hundreds of spectra simultaneously in two channels over a bandpass covering the near-ultraviolet to the near-infrared, with a resolving power R = λ/FWHM ~ 2000. Building on proven heritage, the spectrographs were upgraded for BOSS with volume-phase holographic gratings and modern CCD detectors, improving the peak throughput by nearly a factor of two, extending the bandpass to cover 360 nm < λ < 1000 nm, and increasing the number of fibers from 640 to 1000 per exposure. In this paper we describe the original SDSS spectrograph design and the upgrades implemented for BOSS, and document the predicted and measured performances.

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Abstract: Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 /spl Omega//spl middot/cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.

Radiation effects on photonic imagers-a historical perspective

Abstract: Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors. The paper provides a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.

Determination of in situ trap properties in CCDs using a "single-trap pumping" technique

Abstract: The science goals of space missions from the Hubble Space Telescope through to Gaia and Euclid require ultraprecise positional, photometric, and shape measurement information. However, in the radiation environment of the space telescopes, damage to the focal plane detectors through high-energy protons leads to the creation of traps, a loss of charge transfer efficiency, and a consequent deterioration in measurement accuracy. An understanding of the traps produced and their properties in the CCD during operation is essential to allow optimization of the devices and suitable modeling to correct the effect of the damage through the postprocessing of images. The technique of “pumping single traps” has allowed the study of individual traps in high detail that cannot be achieved with other techniques, such as deep level transient spectroscopy, whilst also locating each trap to the subpixel level in the device. Outlining the principles used, we have demonstrated the technique for the A-center, the most influential trap in serial readout, giving results consistent with the more general theoretical values, but here showing new results indicating the spread in the emission times achieved and the variation in capture probability of individual traps with increasing signal levels. This technique can now be applied to other time and temperature regimes in the CCD to characterize individual traps in situ under standard operating conditions such that dramatic improvements can be made to optimization processes and modeling techniques.