Influences on the semiconductor laser properties of external optical feedback, i.e., return of a portion of the laser output from a reflector external to the laser cavity, have been examined. Experimental observations with a single mode laser is presented with analysis based on a compound cavity laser model, which has been found to explain essential features of the experimental results. In particular, it has been demonstrated that a laser with external feedback can be multistable and show hysteresis phenomena, analogous to those of non-linear Fabry-Perot resonator. It has also been shown that the dynamic properties of injection lasers are significantly affected by external feedback, depending on interference conditions between returned light and the field inside the laser diode.

External optical feedback effects on semiconductor injection laser properties

The propagation of electromagnetic radiation in periodically stratified media is considered. Media of finite, semi-infinite, and infinite extent are treated. A diagonalization of the unit cell translation operator is used to obtain exact solutions for the Bloch waves, the dispersion relations, and the band structure of the medium. Some new phenomena with applications to integrated optics and laser technology are presented.

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Electromagnetic propagation in periodic stratified media. I. General theory

The ability to control the modes oscillating within a laser resonator is of fundamental importance. In general, the presence of competing modes can be detrimental to beam quality and spectral purity, thus leading to spatial as well as temporal fluctuations in the emitted radiation. We show that by harnessing notions from parity-time (PT) symmetry, stable single–longitudinal mode operation can be readily achieved in a system of coupled microring lasers. The selective breaking of PT symmetry can be used to systematically enhance the maximum attainable output power in the desired mode. This versatile concept is inherently self-adapting and facilitates mode selectivity over a broad bandwidth without the need for other additional intricate components. Our experimental findings provide the possibility to develop synthetic optical devices and structures with enhanced functionality.

http://science.sciencemag.org/content/sci/346/6212/975.full.pdf

Parity-time–symmetric microring lasers

Since the discovery of photosensitivity in optical fibers there has been great interest in the fabrication of Bragg gratings within the core of a fiber. The ability to inscribe intracore Bragg gratings in these photosensitive fibers has revolutionized the field of telecommunications and optical fiber based sensor technology. Over the last few years, the number of researchers investigating fundamental, as well as application aspects of these gratings has increased dramatically. This article reviews the technology of Bragg gratings in optical fibers. It introduces the phenomenon of photosensitivity in optical fibers, examines the properties of Bragg gratings, and presents some of the important developments in devices and applications. The most common fabrication techniques (interferometric, phase mask, and point by point) are examined in detail with reference to the advantages and the disadvantages in utilizing them for inscribing Bragg gratings. Reflectivity, bandwidth, temperature, and strain sensitivity of the Bragg reflectors are examined and novel and special Bragg grating structures such as chirped gratings, blazed gratings, phase-shifted gratings, and superimposed multiple gratings are discussed. A formalism for calculating the spectral response of Bragg grating structures is described. Finally, devices and applications for telecommunication and fiber-optic sensors are described, and the impact of this technology on the future of the above areas is discussed.

Fiber Bragg gratings

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This paper deals with the theory and device applications of periodic thin-film waveguides. Topics treated include mode solutions, optical filters, distributed feedback lasers (DFB), distributed Bragg reflector (DBR) lasers, grating couplers, and phase matching in nonlinear interactions.

/pdf/periodic-structures-for-integrated-optics-inegvy8lro.pdf

Periodic structures for integrated optics

A built-in passive waveguide mechanism is introduced in Al x Ga 1-x As injection lasers by growing planar double heterostructure (DH) layers on a grooved GaAs substrate. The lasing mode is confined to the channel region due to excess absorption loss outside the channel. Stable fundamental mode oscillation is achieved up to twice the threshold current for a channel width of 5-8 \mu . Undesirable lasing behavior usually induced by transverse mode instability, such as nonlinear kinks in the light output versus current characteristics, are significantly reduced in the present lasers. The dc threshold current is 40-90 mA at room temperature. Median lifetime of 780 hours has been obtained during preliminary aging tests at a heat sink temperature of 70°C.

Transverse mode stabilized Al x Ga 1-x As injection lasers with channeled-substrate-planar structure

Lasing spectra of a transverse‐mode‐stabilized AlGaAs laser of a channeled‐substrate planar structure have been investigated. These lasers, which oscillate in the fundamental transverse mode, reproducibly operate in a single longitudinal mode. In addition, their linewidth is as narrow as or smaller than 30 MHz when the injection current is ∼1.2 times above threshold. The intensity distribution and excitation dependence of a nonlasing longitudinal mode have been found to be more complicated than expected from a simple theory: sizable dips have been observed in the envelope function, and nonlasing modes have been found to decrease as the injection current is increased above threshold. Furthermore, hysteresis has invariably been observed in the lasing‐wavelength–vs–device‐temperature (or dc current) characteristics. These behaviors are believed to reflect a slightly inhomogeneous nature of the gain spectrum because of a finite thermalization time of injected carriers, as discussed recently by Yamada and Suematsu.

Longitudinal‐mode behaviors of mode‐stabilized AlxGa1−xAs injection lasers

Undesirable nonlinear ’’kinks’’ in light‐output–vs–current characteristics of stripe geometry double‐heterostructure (DH) injection lasers are significantly reduced by stabilizing the transverse modes along the junction plane. Built‐in passive guiding mechanism is introduced by growing planar (AlGa)As/GaAs DH layers on a grooved GaAs substrate.

Channeled‐substrate planar structure (AlGa)As injection lasers

Distributed‐feedback GaAs‐GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm2 at 170 K and 3.5 kA/cm2 at 300 K.

/pdf/cw-operation-of-distributed-feedback-gaas-gaalas-diode-3q81im1n1d.pdf

Michiharu Nakamura

Papers

Periodic structures for integrated optics

Transverse mode stabilized Al x Ga 1-x As injection lasers with channeled-substrate-planar structure

Longitudinal‐mode behaviors of mode‐stabilized AlxGa1−xAs injection lasers

Channeled‐substrate planar structure (AlGa)As injection lasers

cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K