M
Michihiko Yamanouchi
Researcher at Hokkaido University
Publications - 108
Citations - 7674
Michihiko Yamanouchi is an academic researcher from Hokkaido University. The author has contributed to research in topics: Magnetization & Magnetic anisotropy. The author has an hindex of 40, co-authored 103 publications receiving 6882 citations. Previous affiliations of Michihiko Yamanouchi include Hitachi & Systems Research Institute.
Papers
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Journal ArticleDOI
Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO
J. S. Kim,Jaivardhan Sinha,Masamitsu Hayashi,Michihiko Yamanouchi,Shunsuke Fukami,Tetsuhiro Suzuki,Seiji Mitani,Hideo Ohno +7 more
TL;DR: In this paper, the authors describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructures and show that the effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses.
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Current-induced domain-wall switching in a ferromagnetic semiconductor structure
TL;DR: It is demonstrated that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 105 A cm-2.
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Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor
TL;DR: Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect, which offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.
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Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements
TL;DR: In this article, the authors derived an analytical formula for the harmonic Hall voltages to evaluate the effective field for both out-of-plane and in-plane magnetized systems, and the results illustrate the versatility of harmonic Hall voltage measurement for studying current induced torques in magnetic heterostructures.
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Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
Shun Kanai,Michihiko Yamanouchi,Shoji Ikeda,Yoshinobu Nakatani,Fumihiro Matsukura,Hideo Ohno +5 more
TL;DR: In this paper, a sputtered CoFeB/MgO-based magnetic tunnel junction with a perpendicular magnetic easy axis in a static external magnetic field is realized for a ∼180° magnetization reversal, where the bias voltage pulse duration is adjusted to a half period of the precession.