M
Michio Kondo
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 425
Citations - 11646
Michio Kondo is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 57, co-authored 424 publications receiving 11033 citations. Previous affiliations of Michio Kondo include Tokyo Institute of Technology & University of Graz.
Papers
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Effects of carrier concentration on the dielectric function of ZnO:Ga and In 2 O 3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption
Hiroyuki Fujiwara,Michio Kondo +1 more
TL;DR: In this article, the dielectric functions of transparent conductive oxides with different carrier concentrations were derived from spectroscopic ellipsometry using the Drude and Tauc-Lorentz models.
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Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency
Yuriy Pihosh,Ivan Turkevych,Kazuma Mawatari,Jin Uemura,Yutaka Kazoe,Sonya Kosar,Kikuo Makita,Takeyoshi Sugaya,Takuya Matsui,Daisuke Fujita,Masahiro Tosa,Michio Kondo,Takehiko Kitamori +12 more
TL;DR: It is shown that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer on WO3/BiVO4+CoPi core-shell nanostructureured photoanode that achieves near theoretical water splitting efficiency.
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High rate growth of microcrystalline silicon at low temperatures
TL;DR: In this article, a high rate growth method of microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD) using a novel control of plasma is demonstrated using a high deposition pressure of 2-4 Torr combined with a depletion condition of source gas (SiH 4 ) at a high RF power (a high-pressure-depletion method) and consequently a growth rate of 1.5 nm/s has been achieved using a conventional radio frequency plasma enhanced chemically vapor deposition at 13.56 MHz.
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Hydrogen-doped In2O3 as High-mobility Transparent Conductive Oxide
TL;DR: In this paper, the authors have developed hydrogen-doped In2O3 films on glass with high mobility and high near-infrared transparency by using sputtering process performed at room temperature, followed by post-annealing treatment at 200 °C.
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Abruptness of a-Si :H/c-Si interface revealed by carrier lifetime measurements
Stefaan De Wolf,Michio Kondo +1 more
TL;DR: In this article, the authors confirm that the abruptness of the interface is strongly determined by the annealing process, and that the passivation quality of completely amorphous silicon films can be improved by annaling at temperatures up to 260°C.