Mikhail R. Baklanov

Bio: Mikhail R. Baklanov is an academic researcher from North China University of Technology. The author has contributed to research in topics: Dielectric & Porosimetry. The author has an hindex of 41, co-authored 268 publications receiving 8131 citations. Previous affiliations of Mikhail R. Baklanov include Philips & Moscow State Institute of Radio Engineering, Electronics and Automation.

Low dielectric constant materials for microelectronics

Abstract: The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the character...

Determination of pore size distribution in thin films by ellipsometric porosimetry

Abstract: We show that ellipsometric porosimetry can be used for the measurement of the pore size distribution in thin porous films deposited on top of any smooth solid substrate. In this method, in situ ellipsometry is used to determine the amount of adsorptive, which is adsorbed/condensed in the film. Changes in refractive index and film thickness are used to calculate the quantity of adsorptive present in the film. Room temperature porosimetry based on adsorption of vapor of organic solvents has been developed. In this article, a method of calculation of pore size distribution and results of measurements on mesoporous and microporous xerogel films is discussed. Examination of the validity of the Gurvitsch rule for various organic adsorptives (toluene, heptane, and carbon tetrachloride) is carried out to assess the reliability of measurements of pore size distributions by ellipsometric porosimetry.

Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition.

Abstract: Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap $\ensuremath{\Delta}$ in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature ${T}_{c}$ towards zero, enhancement of spatial fluctuations in $\ensuremath{\Delta}$, and growth of the $\ensuremath{\Delta}/{T}_{c}$ ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

Plasma processing of low-k dielectrics

Abstract: This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed.

Metal-Organic Framework ZIF-8 Films As Low-κ Dielectrics in Microelectronics

Abstract: ZIF-8 films were deposited on silicon wafers and characterized to assess their potential as future insulators (low-κ dielectrics) in microelectronics Scanning electron microscopy and gas adsorption monitored by spectroscopic ellipsometry confirmed the good coalescence of the crystals, the absence of intergranular voids, and the hydrophobicity of the pores Mechanical properties were assessed by nanoindentation and tape tests, confirming sufficient rigidity for chip manufacturing processes (elastic modulus >3 GPa) and the good adhesion to the support The dielectric constant was measured by impedance analysis at different frequencies and temperatures, indicating that κ was only 233 (±005) at 100 kHz, a result of low polarizability and density in the films Intensity voltage curves showed that the leakage current was only 10–8 A cm2 at 1 MV cm–1, and the breakdown voltage was above 2 MV cm–1 In conclusion, metal-organic framework ZIF-8 films were experimentally found to be promising candidates as low-κ

Low dielectric constant materials for microelectronics

Abstract: The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the character...

A buckling-based metrology for measuring the elastic moduli of polymeric thin films

Abstract: As technology continues towards smaller, thinner and lighter devices, more stringent demands are placed on thin polymer films as diffusion barriers, dielectric coatings, electronic packaging and so on. Therefore, there is a growing need for testing platforms to rapidly determine the mechanical properties of thin polymer films and coatings. We introduce here an elegant, efficient measurement method that yields the elastic moduli of nanoscale polymer films in a rapid and quantitative manner without the need for expensive equipment or material-specific modelling. The technique exploits a buckling instability that occurs in bilayers consisting of a stiff, thin film coated onto a relatively soft, thick substrate. Using the spacing of these highly periodic wrinkles, we calculate the film's elastic modulus by applying well-established buckling mechanics. We successfully apply this new measurement platform to several systems displaying a wide range of thicknessess (nanometre to micrometre) and moduli (MPa to GPa).

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Abstract: Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

MOF-based electronic and opto-electronic devices.

Abstract: Metal–organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure–property relationships to identify and rationalize the factors that impact device performance.

An updated roadmap for the integration of metal–organic frameworks with electronic devices and chemical sensors

Abstract: Metal-organic frameworks (MOFs) are typically highlighted for their potential application in gas storage, separations and catalysis. In contrast, the unique prospects these porous and crystalline materials offer for application in electronic devices, although actively developed, are often underexposed. This review highlights the research aimed at the implementation of MOFs as an integral part of solid-state microelectronics. Manufacturing these devices will critically depend on the compatibility of MOFs with existing fabrication protocols and predominant standards. Therefore, it is important to focus in parallel on a fundamental understanding of the distinguishing properties of MOFs and eliminating fabrication-related obstacles for integration. The latter implies a shift from the microcrystalline powder synthesis in chemistry labs, towards film deposition and processing in a cleanroom environment. Both the fundamental and applied aspects of this two-pronged approach are discussed. Critical directions for future research are proposed in an updated high-level roadmap to stimulate the next steps towards MOF-based microelectronics within the community.