Showing papers by "Mildred S. Dresselhaus published in 1974"
TL;DR: In this paper, the temperature dependence of the band parameters associated with the electron pockets in bismuth is presented from 4 to 280 K, based on analysis of magnetoreflection data.
Abstract: The temperature dependence of the band parameters associated with the electron pockets in bismuth is presented from 4 to 280 K, based on analysis of magnetoreflection data. This first determination of the bismuth band parameters over a wide temperature range shows that the same form of the energy dispersion relation is applicable over the entire temperature range. Above \ensuremath{\sim}60 K a large temperature dependence is found for both the band parameters and the momentum matrix elements coupling the valence and conduction bands.
103 citations
TL;DR: A quantitative description of the electronic magnetic levels of bismuth in the low-quantum number limit is presented in this paper, which is based on the simplifications to the Baraff Hamiltonian made by Maltz and Dresselhaus and includes the effects of bands outside the two-band model.
Abstract: A quantitative description of the electronic magnetic levels of bismuth in the low-quantum-number limit is presented The model is based on the simplifications to the Baraff Hamiltonian made by Maltz and Dresselhaus and includes the effects of bands outside the two-band model as well as the interaction between the $j=0$ levels in the conduction and valence bands represented by a coupling parameter $P$ Magnetoreflection results on interband Landau-level and cyclotron-resonance transitions in the low-quantum-number limit are utilized in the determination of the parameters of this model, including the first quantitatitive measurement of $P$ Values for the direct energy gap, cyclotron effective masses, and coupling parameter $P$ are reported for $\stackrel{\ensuremath{\rightarrow}}{H}\ensuremath{\parallel}\mathrm{binary}$ and $\stackrel{\ensuremath{\rightarrow}}{H}\ensuremath{\parallel}\mathrm{bisectrix}$ axes in the temperature range $42lTl75$ K
37 citations
TL;DR: The anomalous LO-phonon scattering previously reported in EuSe has now been observed in the EuS as discussed by the authors, and this scattering is only observable in the ferromagnetic ordered phase and exhibits a strong dependence on excitation energy.
18 citations
01 Jan 1974
TL;DR: In this article, a quantitative treatment of the lowest quantum-number j=0 Landau levels of the electrons in Bi has important consequences for the description of a magnetic field-induced semimetal-semiconductor transition.
Abstract: The unusual behavior of the lowest quantum-number j=0 Landau levels of the electrons in Bi has important consequences for the description of a magnetic field-induced semimetal-semiconductor transition. We discuss a quantitative treatment of the j=0 Landau levels, based upon the Baraff Hamiltonian, and including the kH-dependence. Magnetoreflection experiments over a range of photon energies on Bi, Bi98Sb2 and Bi97Sb3 for \(\overrightarrow H \) || binary axis provide experimental confirmation for the model. For large H, the kH-dependence of the j=0 levels is anomalous, showing a “camel-back” shape. As the j=0 conduction band level at kH=O crosses EF, magnetic field-induced carrier pockets are formed away from kH=0. The implications of these magnetic field-induced pockets on a semimetal-semiconductor transition are discussed.
2 citations
01 Jan 1974
TL;DR: In this paper, several new features associated with the magnetic field, temperature, and laser excitation energy-dependence of the Raman scattering effect in EuSe were reported, including the persistence of this line above Tc and the observation of two energy ranges where resonant enhancement occurs.
Abstract: We report here several new features associated with the magnetic field, temperature, and laser excitation energy-dependence of the magnetic field-induced Raman scattering effect in EuSe. New features include the persistence of this line above Tc and the observation of two energy ranges where resonant enhancement occurs.