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Min J. Jung

Bio: Min J. Jung is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Sputter deposition & Cavity magnetron. The author has an hindex of 11, co-authored 20 publications receiving 336 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a transparent conductive Al doped ZnO thin films were prepared on glass and polymer substrates by unipolar pulsed d.c. co-CFUBM (Closed Field Unbalanced Magnetron).
Abstract: Transparent conductive Al doped ZnO thin films were prepared on glass and polymer substrates by unipolar pulsed d.c. co-CFUBM (Closed Field Unbalanced Magnetron) sputtering at ZnO and Al targets without introducing any oxygen at room temperature. The lowest resistivity of 1.2 mΩ cm as well as the transmittance of above 84% was obtained by controlling working pressure. But the resistivity is slightly increased up to 6.8 mΩ cm with time passing due to the unstable microstructure caused by the low temperature process.

44 citations

Journal ArticleDOI
TL;DR: In this article, a DC magnetron sputtering method was used to spatter a thin film of amorphous TiNxOy with increasing oxygen content, which was examined by X-ray photoelectron spectroscopy analysis with the increased oxygen content.
Abstract: In this work, TiNxOy thin film was deposited by a DC magnetron sputtering method as a function of oxygen flow rate Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy analysis with the increased oxygen content As the oxygen content increased, the peak positions of Ti2p shift to 459 (Ti2p 1 2 ) and 464 eV (Ti2p3/2) with higher valence state, respectively The film growth orientation and microstructural characteristics were also analyzed by transmission electron microscopy The major part of the sample was amorphous TiNxOy and the minor part was TiN(1 1 1) crystallity as seen by HRTEM image and micro-diffraction pattern The resistivities of TiNxOy thin films were varied up to 1010 Ω cm with increasing oxygen contents Such results allowed us to understand the close relationships between the chemical states, microstructural characteristics and the resistivities

41 citations

Journal ArticleDOI
TL;DR: In this paper, a grid in front of the target increases the metal ion ratio using OES and observing both Ti neutrals and ions, it was confirmed that the relative ionization could be qualitatively extended with grid-attached magnetron sputtering compared with a conventional magnetron system.

40 citations

Journal ArticleDOI
Yun M. Chung1, Min J. Jung1, Jeon G. Han1, Min W. Lee1, Yong M. Kim1 
TL;DR: In this paper, the influence of the plasma treatments using Ar and Ar+O 2 on surface energy, morphology and chemical structure of the films was investigated, and it was revealed that both modifications caused surface activation of the polymer film, but they obeyed different mechanisms enhancing polymer wettability.

38 citations

01 Feb 2003
TL;DR: In this article, the influence of the plasma treatments using Ar and Ar+O 2 on surface energy, morphology and chemical structure of the films was investigated, and it was revealed that both modifications caused surface activation of the polymer film, but they obeyed different mechanisms enhancing polymer wettability.
Abstract: Abstract Commercial polymers in thin film form were used for modification by atmospheric RF plasma. The influence of the plasma treatments using Ar and Ar+O 2 on surface energy, morphology and chemical structure of the films was investigated. It was revealed that both modifications caused surface activation of the polymer film, but they obeyed different mechanisms enhancing polymer wettability. First, surface graphitization due to argon sputtering caused hydrogen to free the surface and then reacts with oxygen in the air. Second, surface oxidation is connected with the functional group formation. The reactions of Ti with the polymer led to the simultaneous formation of TiCl 2 , TiC, Ti-oxide and they contributed to film adhesion. In comparison with Ar, the mixed Ar+O 2 RF plasma treatment was a more timesaving process and had more influences on surface activation and film adhesion.

38 citations


Cited by
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Journal ArticleDOI
TL;DR: A review of surface modification techniques for titanium and titanium alloys can be found in this article, where the authors have shown that the wear resistance, corrosion resistance, and biological properties can be improved selectively using the appropriate surface treatment techniques while the desirable bulk attributes of the materials are retained.
Abstract: Titanium and titanium alloys are widely used in biomedical devices and components, especially as hard tissue replacements as well as in cardiac and cardiovascular applications, because of their desirable properties, such as relatively low modulus, good fatigue strength, formability, machinability, corrosion resistance, and biocompatibility. However, titanium and its alloys cannot meet all of the clinical requirements. Therefore, in order to improve the biological, chemical, and mechanical properties, surface modification is often performed. This article reviews the various surface modification technologies pertaining to titanium and titanium alloys including mechanical treatment, thermal spraying, sol–gel, chemical and electrochemical treatment, and ion implantation from the perspective of biomedical engineering. Recent work has shown that the wear resistance, corrosion resistance, and biological properties of titanium and titanium alloys can be improved selectively using the appropriate surface treatment techniques while the desirable bulk attributes of the materials are retained. The proper surface treatment expands the use of titanium and titanium alloys in the biomedical fields. Some of the recent applications are also discussed in this paper.

3,019 citations

PatentDOI
06 Apr 2012-Science
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

1,673 citations

Patent
02 Jun 2005
TL;DR: In this article, the authors present methods and devices for fabricating printable semiconductor elements and assembling them onto substrate surfaces, which are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on polymeric materials.
Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

558 citations

Patent
31 Oct 2007
TL;DR: In this article, the authors describe a range of useful physical and mechanical properties including flexibility, shapeability, conformability, and stretchablity of printed optical devices and devices, such as light emitting devices, light collecting systems, light sensing systems and photovoltaic systems.
Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

532 citations

Patent
12 May 2010
TL;DR: In this article, a number of printable structures and methods for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components.
Abstract: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

444 citations