Min Sun

TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.

TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.

TL;DR: In this article, the authors demonstrated GaN vertical Schottky and p-n diodes on Si substrates for the first time, achieving a breakdown voltage of 205 V and a soft BV higher than 300 V, respectively, with peak electric field of 2.9 MV/cm in GaN.

TL;DR: In this article, the authors present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors and compare their thermal performance.

TL;DR: In this article, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation to suppress the leakage along the etch sidewall.