M
Ming-Dou Ker
Researcher at National Chiao Tung University
Publications - 664
Citations - 9707
Ming-Dou Ker is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Electrostatic discharge & CMOS. The author has an hindex of 44, co-authored 645 publications receiving 9042 citations. Previous affiliations of Ming-Dou Ker include Novatek & Industrial Technology Research Institute.
Papers
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Journal ArticleDOI
Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits
Ming-Dou Ker,Kuo-Chun Hsu +1 more
TL;DR: An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented and the solutions to overcome latchup issue in the SCR-based devices are discussed.
Journal ArticleDOI
Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes
TL;DR: The new proposed circuit with consideration of gate-oxide reliability is designed with two pumping branches and is suitable for applications in low-voltage CMOS processes because of its high pumping efficiency and no overstress across the gate oxide of devices.
Journal ArticleDOI
A Fully Integrated 8-Channel Closed-Loop Neural-Prosthetic CMOS SoC for Real-Time Epileptic Seizure Control
Wei-Ming Chen,Herming Chiueh,Tsan-Jieh Chen,Chia-Lun Ho,Chi Jeng,Shun-Ting Chang,Ming-Dou Ker,Chun-Yu Lin,Ya-Chun Huang,Chia-Wei Chou,Tsun-Yuan Fan,Ming-Seng Cheng,Sheng-Fu Liang,Tzu-Chieh Chien,Sih-Yen Wu,Yu-Lin Wang,Fu-Zen Shaw,Yu-Hsing Huang,Chia-Hsiang Yang,Jin-Chern Chiou,Chih-Wei Chang,Lei-Chun Chou,Chung-Yu Wu +22 more
TL;DR: An 8-channel closed-loop neural-prosthetic SoC is presented for real-time intracranial EEG (iEEG) acquisition, seizure detection, and electrical stimulation in order to suppress epileptic seizures.
Patent
Silicon-on-insulator diodes and ESD protection circuits
TL;DR: In this article, a silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided for electrical overstress (EOS)/electrostatic discharge (ESD) protection.
Journal ArticleDOI
New Curvature-Compensation Technique for CMOS Bandgap Reference With Sub-1-V Operation
Ming-Dou Ker,Jung-Sheng Chen +1 more
TL;DR: The new proposed sub-1V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25 /spl mu/m CMOS process.