M
MingJian Ding
Researcher at South China University of Technology
Publications - 6
Citations - 59
MingJian Ding is an academic researcher from South China University of Technology. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 4, co-authored 6 publications receiving 24 citations.
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Journal ArticleDOI
Giant energy storage density in lead-free dielectric thin films deposited on Si wafers with an artificial dead-layer
Xiaoyang Chen,Biaolin Peng,MingJian Ding,Zhang Xiaoshan,Bin Xie,Taolan Mo,Qi Zhang,Qi Zhang,Ping Yu,Zhong Lin Wang +9 more
TL;DR: In this paper, an ultrahigh energy storage density (W) was achieved in the Ba0.3Sr0.7Zr 0.18Ti0.82O3 (BSZT) relaxor ferroelectric thin films with the help of an ultrathin Ca0.8O1.8 (CSZ) artificial dead layer.
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Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films
TL;DR: In this paper, the authors used radio frequency (RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes (Au or Pt) to improve the electric breakdown strength and the leakage current of the lNO/bST thin film.
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Greatly enhanced breakdown strength of Pt/LNO/BST/Au thin films by regulating the space charge limited current though the dielectrics/electrode interface modification
TL;DR: In this paper, an ultrathin SrTiO3 (STO) layer was inserted between the Pt/LaNiO3/Ba0.67Sr0.33Ti0.989Mn0.003Y0.008O3(Mn/Y doped BST) dielectric thin films and the Au electrode.
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The effects of substrate temperatures on the electrical properties of CaZrO3 thin films prepared by RF magnetron sputtering
TL;DR: In this paper, the effects of substrate temperatures on structure and electrical properties of CaZrO3 thin films were investigated in detail by means of X-ray diffraction (XRD), Scanning electron microscope (SEM), Multi-frequency LCR meter (HP4294A), and Radiant Precision Workstation to study the phase structure, cross-section morphology, dielectric and ferroelectric properties at different substrate temperatures.