Minjoo Larry Lee

Bio: Minjoo Larry Lee is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Molecular beam epitaxy & Solar cell. The author has an hindex of 27, co-authored 124 publications receiving 2563 citations. Previous affiliations of Minjoo Larry Lee include RTI International & Yale University.

Polymer bulk heterojunction solar cells employing Förster resonance energy transfer

Abstract: There are two crucial tasks for realizing high-efficiency polymer solar cells (PSCs): increasing the range of the spectral absorption of light and efficiently harvesting photogenerated excitons. Here, we describe Forster resonance energy transfer-based heterojunction polymer solar cells that incorporate squaraine dye. The high absorbance of squaraine in the near-infrared region broadens the spectral absorption of the solar cells and assists in developing an ordered nanomorphology for enhanced charge transport. Femtosecond spectroscopic studies reveal highly efficient (up to 96%) excitation energy transfer from poly(3-hexylthiophene) to squaraine occurring on a picosecond timescale. We demonstrate a 38% increase in power conversion efficiency to reach 4.5%, and suggest that this system has improved exciton migration over long distances. This architecture transcends traditional multiblend systems, allowing multiple donor materials with separate spectral responses to work synergistically, thereby enabling an improvement in light absorption and conversion. This opens up a new avenue for the development of high-efficiency polymer solar cells.

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

Abstract: The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

Synthesis of thin-film black phosphorus on a flexible substrate

Abstract: We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposit a red phosphorus thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirm the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2 V−1 s−1, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film BP.

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

Abstract: We report a study on Ge diffusion and its impact on the electrical properties of TaN∕HfO2∕Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO2 formed at the HfO2∕Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH3 nitridation has resulted in improved electrical properties of TaN∕HfO2∕Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion.

Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

Abstract: Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+∕p diode compared with a p+∕n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge∕Si1−xGex∕Si (SiGe) substrates with a TDD of 1×106cm−2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current–voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+∕p solar cells compared with GaAs p+∕n solar cells. Experimentally, the open-ci...

Light-emitting diodes

Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

Nanoscale thermal transport. II. 2003–2012

Abstract: A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites

Abstract: Metal halide semiconductors with perovskite crystal structures have recently emerged as highly promising optoelectronic materials. Despite the recent surge of reports on microcrystalline, thin-film and bulk single-crystalline metal halides, very little is known about the photophysics of metal halides in the form of uniform, size-tunable nanocrystals. Here we report low-threshold amplified spontaneous emission and lasing from ∼10 nm monodisperse colloidal nanocrystals of caesium lead halide perovskites CsPbX3 (X=Cl, Br or I, or mixed Cl/Br and Br/I systems). We find that room-temperature optical amplification can be obtained in the entire visible spectral range (440–700 nm) with low pump thresholds down to 5±1 μJ cm−2 and high values of modal net gain of at least 450±30 cm−1. Two kinds of lasing modes are successfully observed: whispering-gallery-mode lasing using silica microspheres as high-finesse resonators, conformally coated with CsPbX3 nanocrystals and random lasing in films of CsPbX3 nanocrystals. Lead halide perovskite colloidal nanocrystals have promising optoelectronic properties, such as high photoluminescence quantum yields and narrow emission linewidths. Here, the authors report low-threshold amplified spontaneous emission and two kinds of lasing in nanostructured caesium lead halide perovskites.

Organic Optoelectronic Materials: Mechanisms and Applications

Abstract: Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjug...