Mitsuko Onoda

Bio: Mitsuko Onoda is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Crystal structure & X-ray crystallography. The author has an hindex of 16, co-authored 75 publications receiving 2478 citations. Previous affiliations of Mitsuko Onoda include Universidad de Sonora.

Rietveld analysis of the modulated structure in the superconducting oxide Bi2(Sr,Ca)3Cu2O8+x.

Abstract: The modulated structure of the high-${\mathit{T}}_{\mathit{c}}$ superconductor ${\mathrm{Bi}}_{2}$(Sr,Ca${)}_{3}$${\mathrm{Cu}}_{2}$${\mathrm{O}}_{8+\mathit{x}}$ was analyzed with a newly developed Rietveld refinement program for modulated structures. The structure refinement was made by the simultaneous refinement method using x-ray and time-of-flight neutron-diffraction data. It has a one-dimensionally modulated structure with N Bbmb/11\ifmmode\bar\else\textasciimacron\fi{}1, a=5.3957(3), b=5.3971(3), c=30.649(1) \AA{}, and k=0.2118(1)${\mathbf{b}}^{\mathrm{*}}$. Atoms in Bi-O, Sr-O, Cu-O, and Ca layers are all greatly displaced from their average positions. In particular Bi atoms are displaced mainly along the b axis, forming Bi-condensed and Bi-dilute regions. The characteristic feature of the structure is the existence of extra oxygens, giving x=1.0, in the Bi-dilute region of the Bi-O layer. Bi has a distorted rocksalt-type oxygen coordination with four short Bi-O bonds in the Bi-condensed region and a deformed square pyramidal coordination with five Bi-O bonds in the Bi-dilute region. The apical oxygen of a ${\mathrm{CuO}}_{5}$ pyramid, which joins Cu to Bi, moves along with Bi, distorting the pyramid considerably.

Assignment of the powder x-ray diffraction pattern of superconductor bi2(sr, ca)3-xcu2oy

Abstract: The powder X-ray diffraction pattern of superconductor Bi2(Sr, Ca)3-xCu2Oy was assigned taking into account the satellite reflections arising from an incommensurate modulated structure. All reflections are indexable with h a*+k b*+l c*+m k, provided that the wave vector k of the modulated structure is b*/4.8. The result shows that many satellites can be observed and some satellite intensities are strong.

Angle-resolved photoemission studies of the cuprate superconductors

Abstract: The last decade witnessed significant progress in angle-resolved photoemission spectroscopy (ARPES) and its applications. Today, ARPES experiments with 2-meV energy resolution and $0.2\ifmmode^\circ\else\textdegree\fi{}$ angular resolution are a reality even for photoemission on solids. These technological advances and the improved sample quality have enabled ARPES to emerge as a leading tool in the investigation of the high-${T}_{c}$ superconductors. This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature. The low-energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and $d$-wave-like dispersion, evidence of electronic inhomogeneity and nanoscale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. Given the dynamic nature of the field, we chose to focus mainly on reviewing the experimental data, as on the experimental side a general consensus has been reached, whereas interpretations and related theoretical models can vary significantly. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides an overview of the scientific issues relevant to the investigation of the low-energy electronic structure by ARPES. The rest of the paper is devoted to the experimental results from the cuprates, and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self-energy, and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Abstract: We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device and display device

Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

Abstract: With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...