Mo Huang

Bio: Mo Huang is an academic researcher from University of Macau. The author has contributed to research in topics: Low-dropout regulator & Capacitor. The author has an hindex of 13, co-authored 67 publications receiving 601 citations. Previous affiliations of Mo Huang include Carnegie Mellon University & Sun Yat-sen University.

A Fully Integrated Digital LDO With Coarse–Fine-Tuning and Burst-Mode Operation

Abstract: The digital low dropout regulator (D-LDO) has drawn significant attention recently for its low-voltage operation and process scalability. However, the tradeoff between current efficiency and transient response speed has limited its applications. In this brief, a coarse–fine-tuning technique with burst-mode operation is proposed to the D-LDO. Once the voltage undershoot/overshoot is detected, the coarse tuning quickly finds out the coarse control word in which the load current should be located, with large power MOS strength and high sampling frequency for a fixed time. Then, the fine-tuning, with reduced power MOS strength and sampling frequency, regulates the D-LDO to the desired output voltage and takes over the steady-state operation for high accuracy and current efficiency. The proposed D-LDO is verified in a 65-nm CMOS process with a 0.01-mm2 active area. The measured voltage undershoot and overshoot are 55 and 47 mV, respectively, with load steps of 2 to 100 mA with a 20-ns edge time. The quiescent current is 82 $\mu\textrm{A}$ , with a 0.43-ps figure of merit achieved. Moreover, the reference tracking speed is 1.5 $\textrm{V}/\mu\textrm{s}$ .

A Wide Input Range Dual-Path CMOS Rectifier for RF Energy Harvesting

Abstract: This brief presents a dual-path CMOS rectifier with adaptive control for ultrahigh-frequency (UHF) RF energy harvesters. The input power range with high power conversion efficiency (high PCE) of the rectifier is extended by the proposed architecture, which includes a low-power path and a high-power path. The dual-path rectifier with an adaptive control circuit is fabricated in a 65-nm CMOS process. Operating at 900 MHz and driving a 147-kΩ load resistor, the measured PCE of this work can be maintained above 20% with an 11-dB input range from -16 to -5 dBm, while only an 8-dB input range can be achieved with traditional single-path rectifiers. A sensitivity of -17.7 dBm is measured with 1-V output voltage across a capacitive load.

An Analog-Assisted Tri-Loop Digital Low-Dropout Regulator

Abstract: This paper presents an analog-assisted (AA) output-capacitor-free digital low-dropout (D-LDO) regulator with tri-loop control. For responding to instant load transients, the proposed high-pass AA loop momentarily adjusts the unit current of the power switch array, and significantly reduces the voltage spikes. In the proposed D-LDO, the overall 512 output current steps are divided into three sub-sections controlled by coarse/fine loops with carry-in/out operations. Therefore, the required shift register (SR) length is reduced, and a 9-bit output current resolution is realized by using only 28-SR bits. Besides, the coarse-tuning loop helps to reduce the recovery time, while the fine-tuning loop improves the output accuracy. To eliminate the limit cycle oscillation and reduce the quiescent current, a freeze mode is added after the fine-tuning operation. To reduce the output glitches and the recovery time, a nonlinear coarse word control is designed for the carry-in/out operations. The D-LDO is fabricated in a 65-nm general purpose CMOS process. A maximum voltage undershoot/overshoot of 105 mV is measured with a 10-mA/1-ns load step and a total capacitor of only 100 pF. Thus, the resulting figure-of-merit is 0.23 ps.

A Reconfigurable Bidirectional Wireless Power Transceiver for Battery-to-Battery Wireless Charging

Abstract: Battery-to-battery (B2B) wireless charging can take place in many scenarios, such as using a mobile phone to charge another mobile phone, wearable devices, or low-power sensor nodes. To facilitate this wireless power transfer (WPT) function with the minimum additional cost, we propose a monolithic reconfigurable bidirectional WPT transceiver designed for the first time in CMOS, which can be reconfigured between a differential class-D power amplifier (PA) and a full-wave rectifier. Meanwhile, we employed a maximum current charging mode to maximize the B2B charging efficiency, by directly charging the loading battery with the rectifier, and by powering the PA with the sourcing battery. Then, we reduced the number of cascaded WPT stages from five in the conventional design to three. This bidirectional WPT transceiver fabricated in 0.35 μ m CMOS occupies 3.9 mm2 of silicon area. The bidirectional WPT function, verified at 6.78 MHz with only one off-chip capacitor, exhibits peak efficiencies of 91.5% and 58.6% for the receiver and the overall system, respectively, when the output power is 1.55 W.

Limit Cycle Oscillation Reduction for Digital Low Dropout Regulators

Abstract: The digital low dropout regulator (D-LDO) has drawn significant attention recently for its low-voltage operation and process-scalability. However, the D-LDO inherently suffers from limit cycle oscillation (LCO). To address this issue, the modes and amplitudes of LCO are calculated in this work and verified by SPICE simulation in a 65-nm CMOS process. An LCO reduction technique for the D-LDO is then proposed, by adding two unit power transistors in parallel with the main power MOS array as a feedforward path. This technique sets the LCO mode to 1 and effectively reduces the ripple amplitude for a wide (0.5–20 mA) load current range. When compared with the dead-zone scheme, this technique minimizes LCO with negligible circuit complexity and design difficulty.

Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

Abstract: Humidity measurement is one of the most significant issues in various areas of applications such as instrumentation, automated systems, agriculture, climatology and GIS. Numerous sorts of humidity sensors fabricated and developed for industrial and laboratory applications are reviewed and presented in this article. The survey frequently concentrates on the RH sensors based upon their organic and inorganic functional materials, e.g., porous ceramics (semiconductors), polymers, ceramic/polymer and electrolytes, as well as conduction mechanism and fabrication technologies. A significant aim of this review is to provide a distinct categorization pursuant to state of the art humidity sensor types, principles of work, sensing substances, transduction mechanisms, and production technologies. Furthermore, performance characteristics of the different humidity sensors such as electrical and statistical data will be detailed and gives an added value to the report. By comparison of overall prospects of the sensors it was revealed that there are still drawbacks as to efficiency of sensing elements and conduction values. The flexibility offered by thick film and thin film processes either in the preparation of materials or in the choice of shape and size of the sensor structure provides advantages over other technologies. These ceramic sensors show faster response than other types.

Processing, Structure, Properties, and Applications of PZT Thin Films

Abstract: There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic wav...

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Abstract: We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic, and multiferroic materials. Also, we consider ferrimagnetic oxides in the context of the new, rapidly developing field of negative-index metamaterials. This review is motivated by the recent resurgence of interest in complex oxides owing to their coupling of electrical, magnetic, thermal, mechanical, and optical properties, which make them suitable for a wide variety of applications, including heat, motion, electric, and magnetic sensors; tunable and compact microwave passive components; surface acoustic wave devices; nonlinear optics; and nonvolatile memory, and pave the way for designing multifunctional devices and unique applications in spintronics and negative refraction-index media. For most of the materials treated here, structural and physical propertie...

A Fully Integrated Digital LDO With Coarse–Fine-Tuning and Burst-Mode Operation

Abstract: The digital low dropout regulator (D-LDO) has drawn significant attention recently for its low-voltage operation and process scalability. However, the tradeoff between current efficiency and transient response speed has limited its applications. In this brief, a coarse–fine-tuning technique with burst-mode operation is proposed to the D-LDO. Once the voltage undershoot/overshoot is detected, the coarse tuning quickly finds out the coarse control word in which the load current should be located, with large power MOS strength and high sampling frequency for a fixed time. Then, the fine-tuning, with reduced power MOS strength and sampling frequency, regulates the D-LDO to the desired output voltage and takes over the steady-state operation for high accuracy and current efficiency. The proposed D-LDO is verified in a 65-nm CMOS process with a 0.01-mm2 active area. The measured voltage undershoot and overshoot are 55 and 47 mV, respectively, with load steps of 2 to 100 mA with a 20-ns edge time. The quiescent current is 82 $\mu\textrm{A}$ , with a 0.43-ps figure of merit achieved. Moreover, the reference tracking speed is 1.5 $\textrm{V}/\mu\textrm{s}$ .