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Mohana K. Rajpalke

Researcher at University of Liverpool

Publications -  71
Citations -  1227

Mohana K. Rajpalke is an academic researcher from University of Liverpool. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 18, co-authored 70 publications receiving 1077 citations. Previous affiliations of Mohana K. Rajpalke include Indian Institute of Science & Norwegian University of Science and Technology.

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Growth and properties of GaSbBi alloys

TL;DR: In this article, molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 005 and the Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which indicated high crystallinity and that >98% of the Bi atoms are substitutional.
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High Bi content GaSbBi alloys

TL;DR: The epitaxial growth, structural, and optical properties of GaSb 1 − x Bi x alloys have been investigated in this paper, where the Bi incorporation was varied in the range 0.31 − 1.33 µm h−1.
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb (x) nanowires

TL;DR: In this article, the effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated, and a thermodynamic mechanism that accounts for Sb segregation in NWs is also elucidated.
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Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy.

TL;DR: For the first time, a complete control of crystal structure in InAs(1-x)Sb(x) NWs by tuning the antimony (Sb) composition is reported, substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy.
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Binary group III-nitride based heterostructures: band offsets and transport properties

TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.