M
Mohana K. Rajpalke
Researcher at University of Liverpool
Publications - 71
Citations - 1227
Mohana K. Rajpalke is an academic researcher from University of Liverpool. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 18, co-authored 70 publications receiving 1077 citations. Previous affiliations of Mohana K. Rajpalke include Indian Institute of Science & Norwegian University of Science and Technology.
Papers
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Journal ArticleDOI
Growth and properties of GaSbBi alloys
Mohana K. Rajpalke,W. M. Linhart,Michael Alexander Birkett,Kin Man Yu,David O. Scanlon,John Buckeridge,Tim Jones,M. J. Ashwin,Tim D. Veal +8 more
TL;DR: In this article, molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 005 and the Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which indicated high crystallinity and that >98% of the Bi atoms are substitutional.
Journal ArticleDOI
High Bi content GaSbBi alloys
Mohana K. Rajpalke,W. M. Linhart,Michael Alexander Birkett,Kin Man Yu,Jonathan Alaria,J. Kopaczek,Robert Kudrawiec,Tim Jones,M. J. Ashwin,Tim D. Veal +9 more
TL;DR: The epitaxial growth, structural, and optical properties of GaSb 1 − x Bi x alloys have been investigated in this paper, where the Bi incorporation was varied in the range 0.31 − 1.33 µm h−1.
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb (x) nanowires
Ezekiel Anyebe,Mohana K. Rajpalke,Tim D. Veal,C. J. Jin,Zhiming Wang,Qiandong Zhuang,Qiandong Zhuang +6 more
TL;DR: In this article, the effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated, and a thermodynamic mechanism that accounts for Sb segregation in NWs is also elucidated.
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Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy.
Qiandong Zhuang,Ezekiel Anyebe,Rui Chen,Hua-Kun Liu,Ana M. Sanchez,Mohana K. Rajpalke,Tim D. Veal,Zhiming Wang,yongzheng huang,Handong Sun +9 more
TL;DR: For the first time, a complete control of crystal structure in InAs(1-x)Sb(x) NWs by tuning the antimony (Sb) composition is reported, substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy.
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Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.