An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Light emitting diodes reliability review

Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-resolution temperature profiles over the active area of the devices. Depth scans were performed to obtain temperature in the heat-sinking SiC substrate. Limitations in temperature and spatial resolution, and relative advantages of both techniques are discussed. Results are compared to three-dimensional finite-difference simulations

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of state-of-the-art LED structures are analyzed. In particular, we report recent results concerning the following issues: 1) the degradation of the active layer induced by direct current stress due to the increase in nonradiative recombination; 2) the degradation of LEDs submitted to reverse-bias stress tests; 3) the catastrophic failure of advanced LED structures related to electrostatic discharge events; 4) the degradation of the ohmic contacts of GaN-based LEDs; and 5) the degradation of the optical properties of the package/phosphors system of white LEDs. The presented results provide important information on the weaknesses of LED technology and on the design of procedures for reliability evaluation. Results are compared with literature data throughout the text.

A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

Thermal analysis of LED array system with heat pipe

The degradation of high power GaN/InGaN blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and thermal ageing characteristics. The LED samples were stressed at the elevated temperature of 85 °C with an injection current of 350 mA. Changes in the tunnelling current and series resistance for the electrical characteristics and an initial increase followed by a gradual decrease for the optical power were observed. Variations of the thermal resistance in the chip and package were found to be 2 °C W−1 and 0.3 °C W−1, respectively. The responsible factors were proposed to be: (a) the dopant activation and changes of defects in the chip level; (b) the yellowing of the optical lens and structural degradations such as generating voids or delaminations in the package level. The changes in the electrical, optical and thermal characteristics were found to depend on and affect each other. The internal relationship for the characteristics of the three aspects was explained.

https://iopscience.iop.org/article/10.1088/0022-3727/41/3/035107/pdf

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

In this paper we report on the mechanism of delamination in light-emitting diode (LED) packages and its effects on thermal characteristics of LEDs. The LED samples were subjected to moisture preconditioning treatments followed by heat block testing. Transient thermal measurements were performed for the investigation of the thermal behavior of the delaminated LEDs. Increase of thermal resistance with the degree of delamination was observed from the transient measurement test. Thermo-mechanical stress and hygro-mechanical stress in the LED package were obtained by coupled-field analysis using FEA. The calculated thermo-mechanical and hygro-mechanical stress distributions agree well with the micrographical evidence. It was found that the thermo-mechanical stress plays more important role than the hygro-mechanical stress for the development of delamination in the LED packages. Moisture preconditioning for 3 hrs and 6 hrs under 85°C/85RH conditions was found to make little contribution to the delamination between the chip and lead frame. Significant delamination was expected for the samples experienced the moisture preconditioning for 24 hrs.

https://hal.archives-ouvertes.fr/hal-00189481/document

Mechanism and thermal effect of delamination in light-emitting diode packages

http://documents.irevues.inist.fr/bitstream/handle/2042/6430/1022-2.pdf;sequence=1

We present a new technique for measuring the temperature profiles of visible LED chips by use of a nematic liquid crystal with IR laser illumination. The LEDs studied have a multi-quantum-well InGaN/GaN/sapphire structure. New features in this technique are the use of a high-power IR laser beam as the sensing light and the insertion of a color filter in the optical path to block the high-intensity LED light. For the LEDs measured, the conversion efficiency decreases by 70% when the junction temperature rises from 25 to 107 °C. This technique is a valuable tool for studying the performance of LEDs as a function of junction temperature.

Moo Whan Shin

Papers

Thermal analysis of LED array system with heat pipe

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

Mechanism and thermal effect of delamination in light-emitting diode packages

Mechanism and thermal effect of delamination in light-emitting diode packages

Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser