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Moungi G. Bawendi

Researcher at Massachusetts Institute of Technology

Publications -  650
Citations -  128860

Moungi G. Bawendi is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Quantum dot & Nanocrystal. The author has an hindex of 165, co-authored 626 publications receiving 118108 citations. Previous affiliations of Moungi G. Bawendi include United States Department of the Navy & United States Naval Research Laboratory.

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Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites

TL;DR: In this paper, a simple route to the production of high-quality CdE (E=S, Se, Te) semiconductor nanocrystallites is presented, based on pyrolysis of organometallic reagents by injection into a hot coordinating solvent.
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(CdSe)ZnS Core-Shell Quantum Dots - Synthesis and Characterization of a Size Series of Highly Luminescent Nanocrystallites

TL;DR: In this paper, a synthesis of highly luminescent (CdSe)ZnS composite quantum dots with CdSe cores ranging in diameter from 23 to 55 A was reported.
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Synthesis and Characterization of Monodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies

TL;DR: In this article, solution phase syntheses and size-selective separation methods to prepare semiconductor and metal nanocrystals, tunable in size from ∼1 to 20 nm and monodisperse to ≤ 5%, are presented.
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Renal clearance of quantum dots.

TL;DR: This study has precisely defined the requirements for renal filtration and urinary excretion of inorganic, metal-containing nanoparticles and provides a foundation for the design and development of biologically targeted nanoparticles for biomedical applications.
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Optical gain and stimulated emission in nanocrystal quantum dots.

TL;DR: In this article, the authors examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.