M
Moungi G. Bawendi
Researcher at Massachusetts Institute of Technology
Publications - 650
Citations - 128860
Moungi G. Bawendi is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Quantum dot & Nanocrystal. The author has an hindex of 165, co-authored 626 publications receiving 118108 citations. Previous affiliations of Moungi G. Bawendi include United States Department of the Navy & United States Naval Research Laboratory.
Papers
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Proceedings ArticleDOI
Nanoscale Investigation of Collodial Quantum Dot/Organic Semiconductor Interfaces
TL;DR: In this paper, several methods for preparing bilayers of colloidal quantum dots (QDs) and hole-transporting organic semiconductor thin films have been examined and the degree of interpenetration between these two materials at the nanoscale may enhance our understanding of QD-based optoelectronic device performance.
Proceedings ArticleDOI
Size-dependent spectroscopy and photodynamics of some II-VI semiconductor nanocrystallites (quantum dots)
TL;DR: The relaxation dynamics of photoexcited CdSe nanocrystallites (quantum dots) are dominated by the surface and the surface structure creates a random potential for the hole with a size dependent barrier for site to site hopping as mentioned in this paper.
Proceedings ArticleDOI
The use of colloidal quantum dots on focal plane arrays for optical communications
TL;DR: In this article, a dual-use capability for a conventional imager was demonstrated using PbS quantum dots in conjunction with detector arrays to produce an image in the UV and VIS bands using SWIR focal planes.
Quantitative phase contrast imaging of THz electric fields in a dielectric waveguide
TL;DR: In this article, phase contrast imaging is applied to enable, sharply focused visualization of terahertz waves in electro-optic media, allowing quantitative characterization of THz waves in the 60 GHz -4.5 GHz frequency range in a thin dielectric slab and in-focus observation of THZ waves in polaritonic structures.
Journal ArticleDOI
Interfacial Trap-Assisted Triplet Generation in Lead Halide Perovskite Sensitized Solid-State Upconversion
Lili Wang,Jason J. Yoo,Ting-An Lin,Collin F. Perkinson,Yongli Lu,Marc A. Baldo,Moungi G. Bawendi +6 more
TL;DR: In this article, the upconversion performance of perovskite-sensitized triplet generation devices is analyzed using a mild surface solvent treatment, and the authors highlight the importance of interfacial control and provide guidance for further design and optimization of up-conversion devices using perovsites or other semiconductors as sensitizers.