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Moungi G. Bawendi

Researcher at Massachusetts Institute of Technology

Publications -  650
Citations -  128860

Moungi G. Bawendi is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Quantum dot & Nanocrystal. The author has an hindex of 165, co-authored 626 publications receiving 118108 citations. Previous affiliations of Moungi G. Bawendi include United States Department of the Navy & United States Naval Research Laboratory.

Papers
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Controlled Assembly and Anomalous Thermal Expansion of Ultrathin Cesium Lead Bromide Nanoplatelets.

TL;DR: In this article , a controlled assembly of CsPbBr3 nanoplatelets through varying the evaporation rate of the dispersion solvent was reported, and the assembly of superlattices in the face-down and edge-up configurations by electron microscopy, as well as X-ray scattering and diffraction.
Posted Content

Anomalous Transport in Quantum Dot Arrays

TL;DR: In this article, a stationary Levy process of transmission events was proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals.
Journal ArticleDOI

Corrigendum: A transferable model for singlet-fission kinetics

TL;DR: In the version of this article originally published, the author name Moungi G. Bawendi was missing the middle initial and this has now been corrected in the online versions of the article as discussed by the authors.
Patent

Short-wavelength infrared (swir) fluorescence in vivo and intravital imaging with semiconductor nanocrystals

TL;DR: InAs based core-shell particles which lead to tunable, narrow emitting semiconductor nanocrystals with a very high quantum yield which can be preserved in physiological buffers with long stability can used for short wavelength infrared (SWIR) imaging.
Patent

Semiconductor nanocrystals heterostructures

TL;DR: In this article, a semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor materials upon excitation.