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Muhammad Mustafa Hussain

Bio: Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Metal gate & Silicon. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.


Papers
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Journal ArticleDOI
TL;DR: The read operation of memristor-based memories is investigated and a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device is introduced.

378 citations

Journal ArticleDOI
01 Oct 2020
TL;DR: In this article, the authors acknowledge generous support of the King Abdullah University of Science and Technology (KAUST), and acknowledge Dr Joanna M. Nassar, Dr Galo A. Torres, Dr Mohamed T. Ghoneim, Davide Priante, Jhonathan P. Rojas, Sigurdur T. Thoroddsen, and Prof. Boon S. Ooi who contributed to the “pause-embed-resume” data.
Abstract: The authors acknowledge generous support of the King Abdullah University of Science and Technology (KAUST). The authors acknowledge Dr. Joanna M. Nassar, Dr. Galo A. Torres, Dr. Mohamed T. Ghoneim, Andres A. Aguirre-Pablo, Davide Priante, Dr. Jhonathan P. Rojas, Sigurdur T. Thoroddsen, and Prof. Boon S. Ooi who contributed to the “pause-embed-resume” data. The authors thank Kelly Rader for proof reading this manuscript.

219 citations

Journal ArticleDOI
TL;DR: How CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100).
Abstract: Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

193 citations

Journal ArticleDOI
TL;DR: In this paper, an interface dipole model explaining threshold voltage tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed, which is very similar to the trends in dopant electronegativity (EN) and ionic radius (r) expected for a interfacial dipole mechanism.
Abstract: An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in Si∕SiOx∕HfSiON∕REOx/metal gated nFETs as follows: Sr

180 citations

Journal ArticleDOI
TL;DR: The proposed silicon nanotube field effect transistor offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.
Abstract: We introduce the concept of a silicon nanotube field effect transistor whose unique core–shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core–shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.

140 citations


Cited by
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Journal ArticleDOI
TL;DR: Graphene and its derivatives are being studied in nearly every field of science and engineering as mentioned in this paper, and recent progress has shown that the graphene-based materials can have a profound impact on electronic and optoelectronic devices, chemical sensors, nanocomposites and energy storage.

3,118 citations

01 Dec 1991
TL;DR: In this article, self-assembly is defined as the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds.
Abstract: Molecular self-assembly is the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds. Molecular self-assembly is ubiquitous in biological systems and underlies the formation of a wide variety of complex biological structures. Understanding self-assembly and the associated noncovalent interactions that connect complementary interacting molecular surfaces in biological aggregates is a central concern in structural biochemistry. Self-assembly is also emerging as a new strategy in chemical synthesis, with the potential of generating nonbiological structures with dimensions of 1 to 10(2) nanometers (with molecular weights of 10(4) to 10(10) daltons). Structures in the upper part of this range of sizes are presently inaccessible through chemical synthesis, and the ability to prepare them would open a route to structures comparable in size (and perhaps complementary in function) to those that can be prepared by microlithography and other techniques of microfabrication.

2,591 citations

01 Dec 2013
TL;DR: This paper found that the most intensive glacier shrinkage is in the Himalayan region, whereas glacial retreat in the Pamir Plateau region is less apparent, due to changes in atmospheric circulations and precipitation patterns.
Abstract: Glacial melting in the Tibetan Plateau affects the water resources of millions of people. This study finds that—partly owing to changes in atmospheric circulations and precipitation patterns—the most intensive glacier shrinkage is in the Himalayan region, whereas glacial retreat in the Pamir Plateau region is less apparent.

1,599 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations