Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

This review encompasses the most important advances in liver functions and hepatotoxicity and analyzes which mechanisms can be studied in vitro. In a complex architecture of nested, zonated lobules, the liver consists of approximately 80 % hepatocytes and 20 % non-parenchymal cells, the latter being involved in a secondary phase that may dramatically aggravate the initial damage. Hepatotoxicity, as well as hepatic metabolism, is controlled by a set of nuclear receptors (including PXR, CAR, HNF-4α, FXR, LXR, SHP, VDR and PPAR) and signaling pathways. When isolating liver cells, some pathways are activated, e.g., the RAS/MEK/ERK pathway, whereas others are silenced (e.g. HNF-4α), resulting in up- and downregulation of hundreds of genes. An understanding of these changes is crucial for a correct interpretation of in vitro data. The possibilities and limitations of the most useful liver in vitro systems are summarized, including three-dimensional culture techniques, co-cultures with non-parenchymal cells, hepatospheres, precision cut liver slices and the isolated perfused liver. Also discussed is how closely hepatoma, stem cell and iPS cell-derived hepatocyte-like-cells resemble real hepatocytes. Finally, a summary is given of the state of the art of liver in vitro and mathematical modeling systems that are currently used in the pharmaceutical industry with an emphasis on drug metabolism, prediction of clearance, drug interaction, transporter studies and hepatotoxicity. One key message is that despite our enthusiasm for in vitro systems, we must never lose sight of the in vivo situation. Although hepatocytes have been isolated for decades, the hunt for relevant alternative systems has only just begun.

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Recent advances in 2D and 3D in vitro systems using primary hepatocytes, alternative hepatocyte sources and non-parenchymal liver cells and their use in investigating mechanisms of hepatotoxicity, cell signaling and ADME.

Part I: Background and Fundamentals Introduction, Mohamed Gad-el-Hak, University of Notre Dame Scaling of Micromechanical Devices, William Trimmer, Standard MEMS, Inc., and Robert H. Stroud, Aerospace Corporation Mechanical Properties of MEMS Materials, William N. Sharpe, Jr., Johns Hopkins University Flow Physics, Mohamed Gad-el-Hak, University of Notre Dame Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains, Robert M. Kirby and George Em Karniadakis, Brown University, and Oleg Mikulchenko and Kartikeya Mayaram, Oregon State University Liquid Flows in Microchannels, Kendra V. Sharp and Ronald J. Adrian, University of Illinois at Urbana-Champaign, Juan G. Santiago and Joshua I. Molho, Stanford University Burnett Simulations of Flows in Microdevices, Ramesh K. Agarwal and Keon-Young Yun, Wichita State University Molecular-Based Microfluidic Simulation Models, Ali Beskok, Texas A&M University Lubrication in MEMS, Kenneth S. Breuer, Brown University Physics of Thin Liquid Films, Alexander Oron, Technion, Israel Bubble/Drop Transport in Microchannels, Hsueh-Chia Chang, University of Notre Dame Fundamentals of Control Theory, Bill Goodwine, University of Notre Dame Model-Based Flow Control for Distributed Architectures, Thomas R. Bewley, University of California, San Diego Soft Computing in Control, Mihir Sen and Bill Goodwine, University of Notre Dame Part II: Design and Fabrication Materials for Microelectromechanical Systems Christian A. Zorman and Mehran Mehregany, Case Western Reserve University MEMS Fabrication, Marc J. Madou, Nanogen, Inc. LIGA and Other Replication Techniques, Marc J. Madou, Nanogen, Inc. X-Ray-Based Fabrication, Todd Christenson, Sandia National Laboratories Electrochemical Fabrication (EFAB), Adam L. Cohen, MEMGen Corporation Fabrication and Characterization of Single-Crystal Silicon Carbide MEMS, Robert S. Okojie, NASA Glenn Research Center Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide, Glenn M. Beheim, NASA Glenn Research Center Microfabricated Chemical Sensors for Aerospace Applications, Gary W. Hunter, NASA Glenn Research Center, Chung-Chiun Liu, Case Western Reserve University, and Darby B. Makel, Makel Engineering, Inc. Packaging of Harsh-Environment MEMS Devices, Liang-Yu Chen and Jih-Fen Lei, NASA Glenn Research Center Part III: Applications of MEMS Inertial Sensors, Paul L. Bergstrom, Michigan Technological University, and Gary G. Li, OMM, Inc. Micromachined Pressure Sensors, Jae-Sung Park, Chester Wilson, and Yogesh B. Gianchandani, University of Wisconsin-Madison Sensors and Actuators for Turbulent Flows. Lennart Loefdahl, Chalmers University of Technology, and Mohamed Gad-el-Hak, University of Notre Dame Surface-Micromachined Mechanisms, Andrew D. Oliver and David W. Plummer, Sandia National Laboratories Microrobotics Thorbjoern Ebefors and Goeran Stemme, Royal Institute of Technology, Sweden Microscale Vacuum Pumps, E. Phillip Muntz, University of Southern California, and Stephen E. Vargo, SiWave, Inc. Microdroplet Generators. Fan-Gang Tseng, National Tsing Hua University, Taiwan Micro Heat Pipes and Micro Heat Spreaders, G. P. "Bud" Peterson, Rensselaer Polytechnic Institute Microchannel Heat Sinks, Yitshak Zohar, Hong Kong University of Science and Technology Flow Control, Mohamed Gad-el-Hak, University of Notre Dame) Part IV: The Future Reactive Control for Skin-Friction Reduction, Haecheon Choi, Seoul National University Towards MEMS Autonomous Control of Free-Shear Flows, Ahmed Naguib, Michigan State University Fabrication Technologies for Nanoelectromechanical Systems, Gary H. Bernstein, Holly V. Goodson, and Gregory L. Snider, University of Notre Dame Index

The MEMS Handbook

The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

High-temperature electronics - a role for wide bandgap semiconductors?

Polymers have assumed the leading role as substrate materials for microfluidic devices in recent years. They offer a broad range of material parameters as well as material and surface chemical properties which enable microscopic design features that cannot be realised by any other class of materials. A similar range of fabrication technologies exist to generate microfluidic devices from these materials. This review will introduce the currently relevant microfabrication technologies such as replication methods like hot embossing, injection molding, microthermoforming and casting as well as photodefining methods like lithography and laser ablation for microfluidic systems and discuss academic and industrial considerations for their use. A section on back-end processing completes the overview.

Polymer microfabrication technologies for microfluidic systems

Convergence Of Incomes Across Indian States: A Divergent View

Toxic gases, such as NOx, SOx, H2S and other S-containing gases, cause numerous harmful effects on human health even at very low gas concentrations. Reliable detection of various gases in low concentration is mandatory in the fields such as industrial plants, environmental monitoring, air quality assurance, automotive technologies and so on. In this paper, the recent advances in electrochemical sensors for toxic gas detections were reviewed and summarized with a focus on NO2, SO2 and H2S gas sensors. The recent progress of the detection of each of these toxic gases was categorized by the highly explored sensing materials over the past few decades. The important sensing performance parameters like sensitivity/response, response and recovery times at certain gas concentration and operating temperature for different sensor materials and structures have been summarized and tabulated to provide a thorough performance comparison. A novel metric, sensitivity per ppm/response time ratio has been calculated for each sensor in order to compare the overall sensing performance on the same reference. It is found that hybrid materials-based sensors exhibit the highest average ratio for NO2 gas sensing, whereas GaN and metal-oxide based sensors possess the highest ratio for SO2 and H2S gas sensing, respectively. Recently, significant research efforts have been made exploring new sensor materials, such as graphene and its derivatives, transition metal dichalcogenides (TMDs), GaN, metal-metal oxide nanostructures, solid electrolytes and organic materials to detect the above-mentioned toxic gases. In addition, the contemporary progress in SO2 gas sensors based on zeolite and paper and H2S gas sensors based on colorimetric and metal-organic framework (MOF) structures have also been reviewed. Finally, this work reviewed the recent first principle studies on the interaction between gas molecules and novel promising materials like arsenene, borophene, blue phosphorene, GeSe monolayer and germanene. The goal is to understand the surface interaction mechanism.

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO₂, SO₂ and H₂S.

Low (keV) and high (MeV) energy Al and B implants were performed into n‐type 6H‐ and 3C‐SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance‐voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P‐type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation.

Al and B ion‐implantations in 6H‐ and 3C‐SiC

A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either frontside or backside. Morphology, structural, chemical, and optical properties of sputtered NiO and ZnO films were also investigated.

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

The ability to selectively and precisely control the temperature of fluid volumes ranging from a few microliters to sub-nanoliters in microfluidic networks is vital for a wide range of applications in micro total analysis systems (μTAS). In this work, we characterize and model the performance of a thin film microwave transmission line integrated with a microfluidic channel to heat fluids with relevant buffer salt concentrations over a wide range of frequencies. A microchannel fabricated in poly(dimethylsiloxane) (PDMS) is aligned with a thin film microwave transmission line in a coplanar waveguide (CPW) configuration. The electromagnetic fields localized in the gap between the signal and ground lines of the transmission line dielectrically heat the fluid in the selected region of the microchannel. Microwave S-parameter measurements and optical fluorescence-based temperature measurements are used with a theoretical model developed based on classical microwave absorption theory to fully characterize the temperature rise of the fluid. We observe a 0.95 °C mW−1 temperature rise at 15 GHz and confirm that the temperature rise of the fluid is predominantly due to microwave dielectric heating.

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Mulpuri V. Rao

Papers

Convergence Of Incomes Across Indian States: A Divergent View

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO₂, SO₂ and H₂S.

Al and B ion‐implantations in 6H‐ and 3C‐SiC

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Microwave dielectric heating of fluids in an integrated microfluidic device