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Mustansir H. Kheraluwala

Bio: Mustansir H. Kheraluwala is an academic researcher from General Electric. The author has contributed to research in topics: Power factor & Power semiconductor device. The author has an hindex of 13, co-authored 20 publications receiving 808 citations.

Papers
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01 Jan 1999
TL;DR: In this article, the effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/IGBT was compared with state-of-the-art silicon diodes.
Abstract: Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density This paper presents recent results including a comparison with state-of-the-art silicon diodes Switching losses for two silicon diodes (a fast diode, 600 V, 50 A, 60 ns Trr), an ultra-fast silicon diode (600 V, 50 A, 23 ns Trr) and a 4H-SiC diode (600 V, 50 A) are compared The effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/ IGBT are studied both at room temperature and at 150/spl deg/C At room temperature, SiC diodes allow a reduction of IGBT turn-on losses by 25% compared to ultra-fast silicon diodes and by 70% compared to fast silicon diodes At 150/spl deg/C junction temperature, SiC diodes allow a turn-on loss reduction of 35% and 85% compared to ultra-fast and fast silicon diodes respectively The silicon and SiC diodes are used in a boost power converter with the WARP/sup TM/ IGBT to assess the overall effect of SiC diodes on the power converter characteristics Efficiency measurements at light load (100 W) and full load (500 W) are reported Although SiC diodes exhibit very low switching losses, their high conduction losses due to the high forward drop dominate the overall losses, hence reducing the overall efficiency Since this is an ongoing development, it is expected that future prototypes will have improved forward characteristics

140 citations

Proceedings ArticleDOI
03 Oct 1999
TL;DR: In this article, the effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/IGBT was studied both at room temperature and at 150/spl deg/C.
Abstract: Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents recent results including a comparison with state-of-the-art silicon diodes. Switching losses for two silicon diodes (a fast diode, 600 V, 50 A, 60 ns Trr), an ultra-fast silicon diode (600 V, 50 A, 23 ns Trr) and a 4H-SiC diode (600 V, 50 A) are compared. The effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/ IGBT are studied both at room temperature and at 150/spl deg/C. At room temperature, SiC diodes allow a reduction of IGBT turn-on losses by 25% compared to ultra-fast silicon diodes and by 70% compared to fast silicon diodes. At 150/spl deg/C junction temperature, SiC diodes allow a turn-on loss reduction of 35% and 85% compared to ultra-fast and fast silicon diodes respectively. The silicon and SiC diodes are used in a boost power converter with the WARP/sup TM/ IGBT to assess the overall effect of SiC diodes on the power converter characteristics. Efficiency measurements at light load (100 W) and full load (500 W) are reported. Although SiC diodes exhibit very low switching losses, their high conduction losses due to the high forward drop dominate the overall losses, hence reducing the overall efficiency. Since this is an ongoing development, it is expected that future prototypes will have improved forward characteristics.

121 citations

Patent
01 Nov 1999
TL;DR: In this article, a planar single or multi-layer membrane structure is attached to a carrier frame, and a via pattern is formed in the membrane, and upper and lower thermal base plate sub-assemblies are attached to the power device-on-membrane structure.
Abstract: A method of power electronic packaging includes a practicable and reliable method of fabricating power circuit modules and associated connections that are compatible with the standard top layer metalization of commercially available power devices. A planar single- or multi-layer membrane structure is attached to a carrier frame, and a via pattern is formed in the membrane. Power devices are aligned and attached to the planar membrane structure; a top layer interconnect structure is formed by metalizing the vias and the film; and a circuit is formed by patterning a deposited metal layer. The carrier frame is removed, and upper and lower thermal base plate sub-assemblies are attached to the power device-on-membrane structure. The planar device-on-membrane structure accommodates different types of power devices having variations in thickness. The thermal base plate sub-assemblies may include integral, high-performance heat exchangers for providing a low thermal resistance path to the ambient.

88 citations

Proceedings ArticleDOI
02 Oct 1993
TL;DR: In this paper, an AC line fed switching power supply with a single power converter stage is described, which operates with high input power factor while maintaining good regulation of the desired output DC voltage.
Abstract: An AC line fed switching power supply with a single power converter stage is described which operates with high input power factor while maintaining good regulation of the desired output DC voltage. The single-power converter is a dual active bridge DC-to-DC power converter (DABC), comprising high-frequency transformer-coupled input and output bridge converters. The DABC receives a rectified AC line voltage via a diode-bridge rectifier connected to a small, high-frequency filter capacitor. The two active bridges, generating edge-resonant square waves at their transformer terminals, appropriately phase-shifted from each other to simultaneously perform the high-efficiency DC output regulation while maintaining unity power factor at the AC input. The soft-switching nature of the converter allows increased performance (in terms of efficiency and stresses) and reduction in size/weight at operating frequencies in the range of 50-250 kHz. Simulations, and experimental results are presented to corroborate the analysis. >

82 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present design considerations for transformers utilized in high-power high-frequency DC/DC converters, including core material selection, minimization of copper losses due to skin and proximity effects, and the realization of controlled leakage inductances.
Abstract: Design considerations for transformers utilized in high-power high-frequency DC/DC converters are addressed. Major areas of concern are core-material selection, minimization of copper losses due to skin and proximity effects, and the realization of controlled leakage inductances. Coreless characteristics for various high-frequency materials are presented, and the influence of various conventional winding arrangements on the copper losses and leakage field is also demonstrated. Coaxial winding techniques (used commonly in high-frequency transformers) are investigated next as a feasible solution for containing the leakage flux within the interwinding space, thus preventing it from permeating the core and resulting in lower core losses and the avoidance of localized heating. Added benefits of this technique are reduced forces within the transformer, lower copper losses, and robust construction. The performances of two experimental single-phase 50 kW, 50 kHz units are reported. A three-phase version of coaxially wound transformers is also presented. >

80 citations


Cited by
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Journal ArticleDOI
TL;DR: This paper presents an exhaustive review of three-phase improved power quality AC-DC converters configurations, control strategies, selection of components, comparative factors, recent trends, their suitability, and selection for specific applications.
Abstract: Solid-state switch-mode rectification converters have reached a matured level for improving power quality in terms of power-factor correction (PFC), reduced total harmonic distortion at input AC mains and precisely regulated DC output in buck, boost, buck-boost and multilevel modes with unidirectional and bidirectional power flow. This paper deals with a comprehensive review of improved power quality converters (IPQCs) configurations, control approaches, design features, selection of components, other related considerations, and their suitability and selection for specific applications. It is targeted to provide a wide spectrum on the status of IPQC technology to researchers, designers and application engineers working on switched-mode AC-DC converters. A classified list of more than 450 research publications on the state of art of IPQC is also given for a quick reference.

1,691 citations

Journal ArticleDOI
07 Oct 1990
TL;DR: In this article, the performance of a high-power, high-density DC-to-DC converter based on the single-phase dual active bridge (DAB) topology is described.
Abstract: The performance of a high-power, high-power-density DC-to-DC converter based on the single-phase dual active bridge (DAB) topology is described. The dual active bridge converter has been shown to have very attractive features in terms of low device and component stresses, small filter components, low switching losses, high power density and high efficiency, bidirectional power flow, buck-boost operation, and low sensitivity to system parasitics. For high output voltages, on the order of kilovolts, a cascaded output structure is considered. The effects of snubber capacitance and magnetizing inductance on the soft switching region of control are discussed. Various control schemes are outlined. Coaxial transformer design techniques have been utilized to carefully control leakage inductance. The layout and experimental performance of a prototype 50 kW 50 kHz unit operating with an input voltage of 200 V DC and an output voltage of 1600 V DC are presented. >

1,311 citations

Journal ArticleDOI
TL;DR: In this paper, the dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit of high frequency-link (HFL) power conversion systems.
Abstract: High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.

1,306 citations

Patent
23 Jan 2007
TL;DR: In this paper, a gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell, and a buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode.
Abstract: A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

609 citations

Patent
26 Jan 2006
TL;DR: In this article, a switching power-supply circuit consisting of rectifying and smoothing means for generating a rectified and smoothed voltage and outputting the rectified voltage as a direct-current input voltage was proposed.
Abstract: The present invention relates to a switching power-supply circuit comprising: rectifying and smoothing means for generating a rectified and smoothed voltage and outputting the rectified and smoothed voltage as a direct-current input voltage; an insulating converter transformer for transferring a primary-side output to a secondary side; switching means for intermittently passing on the direct-current input voltage to a primary winding of the insulating converter transformer; a primary-side resonance circuit for actuating the switching means in a voltage resonance mode; power-factor improvement means for improving a power factor by generating intermittently a rectified current based on the fed-back switching output voltage; a secondary-side resonance circuit on a secondary side of the insulating converter transformer; direct-current output voltage generation means carrying out a rectification operation in order to generate a secondary-side direct-current output voltage; and constant-voltage control means for executing constant-voltage control on the secondary-side direct-current output voltage.

526 citations