N. Jaouen

Bio: N. Jaouen is an academic researcher. The author has contributed to research in topics: Thermal oxidation & Oxide. The author has an hindex of 1, co-authored 1 publications receiving 3 citations.

SiGe oxidation kinetics and oxide density measured by resonant soft X-ray reflectivity

Abstract: Ultrathin compressively strained SiGe layers is one of the most promising materials for high mobility channels of p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFETs). Fabrication of such layers as well as formation of high-quality gate oxides on SiGe both involve SiGe thermal oxidation processes. These processes require well-controlled oxidation kinetics and oxide properties. This work discusses oxidation kinetics of SiGe in light of the characterization of the thermal oxide density by the Resonant Soft X-Ray Reflectivity (R-SoXR) technique.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.

Abstract: Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies

Abstract: La reduction continue des dimensions des transistors depuis les annees 60 est a l’origine de l’explosion des usages de l’electronique. Toutefois, la reduction des dimensions a l’echelle nanometrique s’accompagne de nouvelles difficultes qui tendent a limiter les gains des transistors en termes de performances et de consommation.Afin de surmonter ces obstacles et maintenir cette dynamique, des canaux a base de nouveaux materiaux a forte mobilite et de nouvelles architectures de transistors sont desormais utilisees ou a l’etude. L’interet de films SiGe contraint en compression sur isolant (SGOI: SiGe-On-Insulator) ultra-minces est double : ils beneficient de la forte mobilite des trous du SiGe contraint en compression ainsi que du meilleur controle electrostatique des structures dites « sur isolant ». Des films SGOI presentant une forte concentration en Ge et une importante contrainte peuvent etre fabriques par une technique industrielle appelee condensation. Cette technique repose sur deux processus simultanes : l’oxydation thermique et selective du SiGe (seul le Si est oxyde) et l’inter-diffusion du SiGe entre l’oxyde thermique et l’oxyde enterre qui se comporte comme une barriere a la diffusion.L’utilisation de cette technique dans un environnement industriel necessite de relever deux defis : maitriser les mecanismes et la cinetique d’oxydation, et atteindre les plus fortes contraintes et qualites cristallines pour lesfilms SGOI.La cinetique de plusieurs procedes d’oxydation industriels et pertinents au regard des besoins technologiques actuels est etudiee a l’aide d’une nouvelle methodologie d’analyse quantitative. Nous etablissons une correlationentre le coefficient de diffusion de l’espece oxydante, qui determine la cinetique d’oxydation, la concentration en Ge a l’interface d’oxydation, et la densite de l’oxyde mesuree par reflectivite de rayons X sur une ligne desynchrotron.Puis, nous avons fabrique des films SGOI presentant des concentrations en Ge jusqu’a 80%. Nous discutons l’evolution de la contrainte de ces films en fonction des parametres du procede et des niveaux de contrainte. Enfin,nous mettons en evidence les effets du procede de condensation sur la qualite cristalline du film SiGe aux interfaces avec les oxydes grâce a l’effet de canalisation d’une technique de retrodiffusion d’ions a moyenne energie (MEIS : Medium Energy Ion Scattering)

Reduced oxygen partial pressure SiGe condensation for the fabrication of compressively strained SGOI substrates

Abstract: We report the use of a low oxygen partial pressure dry furnace oxidation process for the fabrication of ultra-thin compressively strained SGOI layers. The effect of a reduced oxygen partial pressure on oxidation kinetics and Ge depth profile evolution is shown. Resulting strain, SiGe surface and roughness evaluation are carried out to compare the residual strain values and the crystal defects generation to results obtained with a conventional pure oxygen process.

The Study of Sige Channel Formation for FDSOI

Abstract: Si1-xGex channel is becoming one of the most promising materials to improve PMOS device performance. In this work, thickness relation between oxide and pre-dep Si1-xGex is proposed. Two step methods, which rapid thermal oxidation (RTO) combined with anneal (RTA), were used to form Si1-xGex channel for PMOS at FDSOI structure. The concentration and thickness of Si1-xGex were measured by SIMS and TEM. It was found that the thickness of Si1-xGex channel was decreased with increasing soak time and temperature. The profile of Ge gets better when bake time become longer. The uniformity of Si1-xGex was affected by pre-layers.

The Study of Sige Channel Formation for FDSOI

Abstract: Si 1-x Ge x channel is becoming one of the most promising materials to improve PMOS device performance. In this work, thickness relation between oxide and pre-dep Si 1-x Ge x is proposed. Two step methods, which rapid thermal oxidation (RTO) combined with anneal (RTA), were used to form Si 1-x Ge x channel for PMOS at FDSOI structure. The concentration and thickness of Si 1-x Ge x were measured by SIMS and TEM. It was found that the thickness of Si 1-x Ge x channel was decreased with increasing soak time and temperature. The profile of Ge gets better when bake time become longer. The uniformity of Si 1-x Ge x was affected by pre-layers.