N. N. Bikkulova

Bio: N. N. Bikkulova is an academic researcher. The author has contributed to research in topics: Intercalation (chemistry) & Isostructural. The author has an hindex of 1, co-authored 1 publications receiving 10 citations.

Investigation into the Structural and Electrical Properties of Silver-Intercalated Zirconium Diselenide

Abstract: Silver-intercalated zirconium diselenides of the general formula AgxZrSe2 are synthesized for the first time. The phase diagram of the AgxZrSe2 compound is determined in the temperature range 423–523 K and at room temperature. An analysis has revealed the coexistence of two compounds, namely, Ag0.125ZrSe2 and Ag0.25ZrSe2, of which only the latter compound is stable at room temperature. The structural and electrical properties of AgxZrSe2 diselenides are investigated. The results obtained indicate a polaron nature of charge-carrier localization. A comparison with isostructural intercalation compounds shows that free charge carriers play a dominant role in screening of the impurity potential.

Transport properties and polarization phenomena in intercalated Ag x HfSe 2 compounds

Abstract: The electrical properties of intercalated Ag x HfSe2 compounds (x = 0.1, 0.2) have been investigated for the first time. Investigations have been performed using various current electrodes, which make it possible to pass either the electron current or the ion current across the sample. Polarization effects, which indicate the self-consistent migration of charge carriers in the samples, have been found for the samples at room temperature. Based on the characteristic features of polarization decay, coefficients of conjugated chemical diffusion have been evaluated.

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2.

Abstract: Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques Here, we demonstrate the synthesis a

Influence of dopant concentration on the electronic band gap energy of Yb-ZrSe2 thin films for photovoltaic application via electrochemical deposition technique

Abstract: This research focus on the Influence of Dopant Concentration on Polycrystalline Ytterbium-doped ZrSe (Yb-ZrSe) material for possible photovoltaic application using the electrochemical deposition method. The cationic precursor was an aqueous solution of 0.01 mol ZrOCl2.8H2O while the anionic precursor was 0.15 mol selenium was prepared by dissolving with 5 ml of Hydrochloric acid (HCl), and then 0.05 mol Yb (NO3)3.5H2O was used as the dopant. The films were characterized using UV-1800 Visible Spectrophotometer, Bruker D8 Advance x-ray diffractometer with Cu Kα line (λ = 1.54056 A) in 2θ range from 10°–90°and Scanning Electron Microscopy. X-ray diffraction (XRD) of the deposited films on FTO substrate studies reveals that films are polycrystalline by exhibiting diffraction peaks at (111), (200), (200) and (210) corresponds to the following angle (27.00°), (38.01°), (46.02°), (66.02°). (SEM) revealed that the grain size was uniformly distributed on the surface of the substrate. The optical band gap energy was obtained.