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N.P. Barradas

Bio: N.P. Barradas is an academic researcher from Instituto Superior Técnico. The author has contributed to research in topics: Thin film & Sputter deposition. The author has an hindex of 36, co-authored 333 publications receiving 5821 citations. Previous affiliations of N.P. Barradas include University of Lisbon & Cornell University.


Papers
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Journal ArticleDOI
TL;DR: In this article, the combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data, which is fully automatic and does not require time-consuming human intervention.
Abstract: The combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data. The analysis is fully automatic, i.e., it does not require time-consuming human intervention. The algorithm is tested on a complex iron-cobalt silicide spectrum, and all the relevant features are successfully determined. The total analysis time using a PC 486 processor running at 100 MHz is comparable to the data collection time, which opens the way for on-line automatic analysis.

587 citations

Journal ArticleDOI
TL;DR: In this article, the authors present a software tool that can be used to extract quantitative accurate depth profiles from real samples on an industrial scale, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates.
Abstract: Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the `IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160–5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers.

165 citations

Journal ArticleDOI
TL;DR: The IBA DataFurnace (NDF) as mentioned in this paper is a general purpose program for analysis of IBA data, which includes Rutherford backscattering, elastic (non-Rutherford) backscatter, elastic recoil detection analysis (ERDA), non-resonant nuclear reaction analysis (NRA), and particle induced X-ray emission (PIXE).
Abstract: The IBA DataFurnace (NDF) is a general purpose program for analysis of IBA data. It currently includes Rutherford backscattering (RBS), elastic (non-Rutherford) backscattering (EBS), elastic recoil detection analysis (ERDA), non-resonant nuclear reaction analysis (NRA), and particle induced X-ray emission (PIXE). Here we discuss recent developments in the advanced physics capabilities implemented in NDF, supported by advanced algorithms. Examples of real life hard cases are given that illustrate the issues discussed.

149 citations

Journal ArticleDOI
TL;DR: This RBS method is quite general and can be used routinely to accurately validate ion implanter charge collection systems, to certify SIMS standards, and for other applications.
Abstract: Ion beam analysis (IBA) is a cluster of techniques including Rutherford and non-Rutherford backscattering spectrometry, and particle-induced X-ray emission (PIXE). Recently, the ability to treat multiple IBA techniques (including PIXE) self-consistently has been demonstrated. The utility of IBA for accurately depth profiling thin films is critically reviewed. As an important example of IBA, three laboratories have independently measured a silicon sample implanted with a fluence of nominally 5.1015As/cm2 at an unprecedented absolute accuracy. Using 1.5 MeV 4He+ Rutherford backscattering spectrometry (RBS), each lab has demonstrated a combined standard uncertainty around 1% (coverage factor k=1) traceable to an Sb-implanted certified reference material through the silicon electronic stopping power. The uncertainty budget shows that this accuracy is dominated by the knowledge of the electronic stopping, but that special care must also be taken to accurately determine the electronic gain of the detection system and other parameters. This RBS method is quite general and can be used routinely, to accurately validate ion implanter charge collection systems, to certify SIMS standards, and for other applications. The generality of application of such methods in IBA is emphasised: if RBS and PIXE data are analysed self-consistently then the resulting depth profile inherits the accuracy and depth resolution of RBS and the sensitivity and elemental discrimination of PIXE.

92 citations


Cited by
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Journal ArticleDOI
TL;DR: This historical survey compactly summarizes relevant work, much of it from the previous millennium, review deep supervised learning, unsupervised learning, reinforcement learning & evolutionary computation, and indirect search for short programs encoding deep and large networks.

14,635 citations

01 Sep 1955
TL;DR: In this paper, the authors restrict their attention to the ferrites and a few other closely related materials, which are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present.
Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

2,659 citations

Journal ArticleDOI
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

2,440 citations

Journal ArticleDOI
01 Jan 1977-Nature
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

1,560 citations

Journal ArticleDOI
TL;DR: The Computational Brain this paper provides a broad overview of neuroscience and computational theory, followed by a study of some of the most recent and sophisticated modeling work in the context of relevant neurobiological research.

1,472 citations