Handbook of Radioactivity Analysis

Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from -50 to 200/spl deg/C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain-body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical <110> pillar sidewalls and the horizontal <100> wafer surface.

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs

Microwave Semiconductor Devices

In0.53Ga0.47As PIN photodetectors were fabricated and their dark currents were measured. Based on the analysis of different mechanisms, a complete dark current model considering trap-assisted tunneling (TAT) mechanism under low and intermediate reverse bias is constructed by studying the electric fields and carrier generation-recombination rates. The obtained current–voltage experimental results under dark conditions are in good agreement with our simulation using this complete model. The contribution of each mechanism is investigated, and to evaluate the dominant factor deriving from Shockley–Read–Hall generation or TAT, a critical voltage (
 $$V_{cri}$$
 ) where $$I_{TAT} = I_{SRH} \approx 0.5I_{dark}$$
 is proposed. In addition, the effects of thickness and doping concentration of absorption layer on $$V_{cri}$$
 are discussed in detail, from which we demonstrate that $$I_{TAT}$$
 is the dominant component of dark current for those photodetectors operating under the reverse bias of 5 V if the thickness of absorption layer is less than 1 μm when the doping concentration is 1 × 1015 cm−3, or the doping concentration of absorption layer is more than 7 × 1015 cm−3 when the thickness is 2 μm. The effect of temperature on dark current due to TAT is also analyzed.

Analysis of dark current considering trap-assisted tunneling mechanism for InGaAs PIN photodetectors

This paper describes a simple and straight forward implementation of Axis-Aligned Bounding-Box (AABB) for
OpenGL 3-Dimensional (3D) virtual environment for games and simulation purpose. The implementation of AABB is conducted in OpenGL graphic library version 1.2 with C++ programming language by using Visual C++. The implementation could help young and begineer computer graphics student to master the implementation of basic Bounding-Volume (BV) for collision detection and other fields with related to the Axis-Aligned Bounding-Box (AABB).

Implementation Of Axis-Aligned Bounding Box For Opengl3d Virtual Environment

This paper describes the design of Low-pass filter using bowtie Defected Ground Structure (DGS). The designing of low-pass filter begins from lumped element in which the filter will be built using capacitors and inductors before converted to open and short circuited stub. The low-pass filter using bowtie Defected Ground Structure (DGS) is required to operate at 10 GHz for radar application. As a comparison, the design of different size and quantity of bowtie Defected Ground Structure (DGS) were analyzed to identify the better performance of the low-pass filter. The design of this filter had been simulated by using schematic and EM Simulation in Agilent Advanced Design System (ADS) software.

An analysis of low pass filter using bowtie Defected Ground Structure (DGS) at 10 GHz for radar application

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

Microwave filter is a kind of device, which can separate microwave signals with different frequencies. The filter has been utilized widely in many fields such as communication, signal processing, radar and other related fields. An X-band filter using parallel coupled-line technique with DGS is designed. The purpose of this paper is to observe the performance of band-pass filter with defected ground structure operating at a frequency of 10G Hz. The filter designed is run by simulation using Advanced Design System (ADS). Initially, the mid-band frequency is set to 10G Hz. The filter's design and structure is based on the Chebyshev prototype characteristic. The characteristics can be visualized through the response of the reflection coefficient and transmission coefficient.

X band parallel coupled- line with dumbbell dgs filter for radar applications

The analysis of dielectric constant of pharmaceutical medicines at microwave frequency is presented in this paper. The dielectric constant also known as the permittivity was measured by using open-ended coaxial probe technique over the microwave frequency range from 400Mhz to 4GHz. The samples of two pharmaceutical medicines were prepared at different moisture content (5ml, 10ml, 15ml, 20ml, 25ml and 30ml). A Vector Network Analyzer (VNA) was used to record the data of dielectric constant e' and dielectric loss e" of these four sample. The dielectric constant of pharmaceutical medicines samples decreased with the increase of the frequency. On the other hand, the dielectric loss of these samples increased when frequency increased. Both of dielectric constant and dielectric loss of pharmaceutical samples increased with increasing moisture content from 5ml to 30ml.

An analysis of dielectric constant of pharmaceutical medicines using microwave radiation exposure

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.

N. Y. M. Yasin

Papers

An analysis of low pass filter using bowtie Defected Ground Structure (DGS) at 10 GHz for radar application

Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

X band parallel coupled- line with dumbbell dgs filter for radar applications

An analysis of dielectric constant of pharmaceutical medicines using microwave radiation exposure

Variable junction temperature analysis in Silicon IMPATT diode