Nadjib Semmar

Bio: Nadjib Semmar is an academic researcher from University of Orléans. The author has contributed to research in topics: Laser & Thin film. The author has an hindex of 18, co-authored 69 publications receiving 771 citations. Previous affiliations of Nadjib Semmar include Centre national de la recherche scientifique & Ecole Polytechnique de l'Université d'Orléans.

Measuring the energy flux at the substrate position during magnetron sputter deposition processes

Abstract: In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 μs) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

High-speed manufacturing of highly regular femtosecond laser-induced periodic surface structures: Physical origin of regularity

Abstract: Highly regular laser-induced periodic surface structures (HR-LIPSS) have been fabricated on surfaces of Mo, steel alloy and Ti at a record processing speed on large areas and with a record regularity in the obtained sub-wavelength structures. The physical mechanisms governing LIPSS regularity are identified and linked with the decay length (i.e. the mean free path) of the excited surface electromagnetic waves (SEWs). The dispersion of the LIPSS orientation angle well correlates with the SEWs decay length: the shorter this length, the more regular are the LIPSS. A material dependent criterion for obtaining HR-LIPSS is proposed for a large variety of metallic materials. It has been found that decreasing the spot size close to the SEW decay length is a key for covering several cm2 of material surface by HR-LIPSS in a few seconds. Theoretical predictions suggest that reducing the laser wavelength can provide the possibility of HR-LIPSS production on principally any metal. This new achievement in the unprecedented level of control over the laser-induced periodic structure formation makes this laser-writing technology to be flexible, robust and, hence, highly competitive for advanced industrial applications based on surface nanostructuring.

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Abstract: The evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to today's advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described.

Plasma Catalysis for Environmental Treatment and Energy Applications

Abstract: The current status of plasma-catalysis research and the associated possible applications are outlined. A basic explanation of plasma chemistry is given, which is then used as a foundation to indicate the research vector for the ongoing development of various applications. As an example of an environmental application, volatile organic compound decomposition using plasma-catalysis is discussed in depth, from the fundamental concept to the current industrial application status. As a potential application of plasma-catalysis towards the realization of a future “hydrogen society”, ammonia synthesis is discussed in terms of current social attitudes and regulations, along with historical developments. Additionally, up-to-date information on the fundamentals of the nonthermal plasma interaction with a catalyst is provided.

A structure zone diagram including plasma based deposition and ion etching - eScholarship

Abstract: An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.