Nam Lyong Kang

Bio: Nam Lyong Kang is an academic researcher from Pusan National University. The author has contributed to research in topics: Electron & Phonon. The author has an hindex of 7, co-authored 36 publications receiving 121 citations.

Derivation of nonlinear optical conductivity by using a reduction identity and a state-dependent projection method

Abstract: A new nonlinear optical conductivity formula for a system of electrons interacting with phonons was derived using a reduction identity and a state-dependent projection technique introduced by the authors. The results include a general formula for the nonlinear optical conductivity of the general rank and the linear, first-order nonlinear and second-order nonlinear conductivity are calculated in terms of the linewidth. The linewidth term includes the electron and phonon distribution functions properly. Therefore, it is possible to explain the phonon emission and absorption in all electron transition processes in an organized manner.

A surface plasmon resonance study on the optical properties of gold nanoparticles on thin gold films

Abstract: We report on an investigation of the optical properties of gold nanoparticles assembled as thin films of different thickness. The nanoparticles were linked to the surface of a gold chip by dithiol reagents and studied by surface plasmon resonance (SPR) spectroscopy and atomic force microscopy. There is good correlation between the experimental findings and theoretical simulation, and the respective data reveal the presence of ordered nanostructures in the assemblies. The shift in the SPR angle is linearly dependent on the particle size and the ratio of the different particles. SPR spectroscopy also reveals important information in terms of the optical constants of such films. This shall be further applied to in-situ quality control in the fabrication of optoelectronic, solar cell and semiconductor devices.

Theory of phonon-modulated electron spin relaxation time based on the projection—reduction method

Abstract: This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin—orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature (T) dependence of electron spin relaxation times (T1) in silicon is T1 ∝ T−1.07 at low temperatures and T1 ∝ T−3.3 at high temperatures for acoustic deformation constant Pad = 1.4 × 107 eV and optical deformation constant Pod = 4.0 × 1017 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field (B) dependence of the relaxation times is T1 ∝ B−2.7 at 100 K and T1 ∝ B−2.3 at 150 K, which nearly agree with the result of Yafet, T1 ∝ B−3.0 ~ B−2.5.

Optical Transition Linewidths due to Piezoelectric Phonon Scattering in Two-Dimensional Electron Systems

Abstract: Utilizing the optical transition formula derived by a projection method on the linear response scheme, we obtain the optical transition linewidths for the electron system in square well due to piezoelectric phonon scattering in CdS and ZnS. We find that the widths increase with the temperature, but decrease as the well width increases for both materials. We also find that the widths decrease as the electron density increases, and the widths in CdS are larger than those in ZnS since the average electromechanical coupling constant is larger.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Interactions between Light Waves in a Nonlinear Dielectric

Abstract: The induced nonlinear electric dipole and higher moments in an atomic system, irradiated simultaneously by two or three light waves, are calculated by quantum-mechanical perturbation theory. Terms quadratic and cubic in the field amplitudes are included. An important permutation symmetry relation for the nonlinear polarizability is derived and its frequency dependence is discussed. The nonlinear microscopic properties are related to an effective macroscopic nonlinear polarization, which may be incorporated into Maxwell's equations for an infinite, homogeneous, anisotropic, nonlinear, dielectric medium. Energy and power relationships are derived for the nonlinear dielectric which correspond to the Manley-Rowe relations in the theory of parametric amplifiers. Explicit solutions are obtained for the coupled amplitude equations, which describe the interaction between a plane light wave and its second harmonic or the interaction between three plane electromagnetic waves, which satisfy the energy relationship ${\ensuremath{\omega}}_{3}={\ensuremath{\omega}}_{1}+{\ensuremath{\omega}}_{2}$, and the approximate momentum relationship ${\mathrm{k}}_{3}={\mathrm{k}}_{1}+{\mathrm{k}}_{2}+\ensuremath{\Delta}\mathrm{k}$. Third-harmonic generation and interaction between more waves is mentioned. Applications of the theory to the dc and microwave Kerr effect, light modulation, harmonic generation, and parametric conversion are discussed.

Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers

Abstract: The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the k . p method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Abstract: One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Over the last decades, our understanding of carrier mobilities has largely been shaped by experimental investigations and empirical models. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. These new developments are unlocking exciting new opportunities, from exploring carrier transport in quantum matter to in silico designing new semiconductors with tailored transport properties. In this article, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. Our aim is threefold: to make this rapidly-growing research area accessible to a broad community of condensed-matter theorists and materials scientists; to identify key challenges that need to be addressed in order to increase the predictive power of these methods; and to identify new opportunities for increasing the impact of these computational methods on the science and technology of advanced materials. The review is organized in three parts. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part of the article, we review applications of these methods to materials of current interest, from three-dimensional semiconductors to layered and two-dimensional materials. In particular, we discuss in detail recent investigations of classic materials such as silicon, diamond, gallium arsenide, gallium nitride, gallium oxide, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, molybdenum disulfide, and indium selenide. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we identify important classes of materials for which an ab initio study of carrier mobilities is warranted. We discuss the extension of the methodology to study topological quantum matter and materials for spintronics and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.

Light emitting devices having dislocation density maintaining buffer layers

Abstract: A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.