Author
Naoki Makita
Bio: Naoki Makita is an academic researcher. The author has contributed to research in topics: Substrate (electronics) & Crystalline silicon. The author has an hindex of 12, co-authored 21 publications receiving 876 citations.
Papers
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27 May 1997
TL;DR: In this article, a liquid crystal display device including a display section including a liquid-crystal layer, pixel electrodes located in a matrix on one of the pair of substrates, a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes, and a peripheral driving circuit located for driving the display section, the peripheral drive circuit being located on the substrate on which the first thin-film transistors are located and having a second thin film transistor.
Abstract: A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.
178 citations
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16 Dec 1994
TL;DR: In this article, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained using the newly introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films.
Abstract: Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.
101 citations
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16 Dec 1994
TL;DR: In this article, a method for producing a semiconductor film is described, which includes the steps of: (a) forming an amorphous semiconductor on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphus semiconductor material into at least a part of the material; and (c) crystallizing the material by heating to obtain a crystalline semiconductor oxide film from the material, and (d) oxidizing a surface of the crystalline material to form a semiconducting oxide film containing
Abstract: A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
100 citations
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23 Mar 1995
TL;DR: In this paper, the introduction of the catalyst elements is conducted by various methods such as: a formation of a film containing a minute amount of the catalysts, application of a solution containing the catalyst element in several spin coating cycles, diffusion of a catalyst element through a buffer layer, dipping into a solution in which the catalyts are dissolved or dispersed, or formation of plating layer containing the catalyters, resulting in polycrystallization of a portion of the amorphous semiconductor film.
Abstract: In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.
92 citations
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24 Jul 1995
TL;DR: In this article, a method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed.
Abstract: A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film Then, the upper crystalline silicon semiconductor film is removed By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced
90 citations
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01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1,501 citations
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01 Aug 1996TL;DR: In this article, a degenerate semiconductor material with a basic material having a bandgap between conduction band (11) and valence band (12) of electrons greater than 2.5 eV was presented.
Abstract: A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13). The device is capable of comparatively fast switching.
1,065 citations
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17 Jan 2006
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
1,043 citations
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08 Jan 2003
TL;DR: In this article, the surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring, and a terminal is similarly plated in order to make the resistance reduction.
Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.
806 citations
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22 Dec 2004
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3
719 citations