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Author

Naoto Matsuo

Other affiliations: Yamaguchi University, Panasonic
Bio: Naoto Matsuo is an academic researcher from University of Hyogo. The author has contributed to research in topics: Crystallization & Amorphous silicon. The author has an hindex of 14, co-authored 150 publications receiving 704 citations. Previous affiliations of Naoto Matsuo include Yamaguchi University & Panasonic.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a Si-beam radiation cleaning (Rad clean) method was proposed for surface cleaning of Si-MBE, and a model of the cleaning process has been examined, with the results of the formation of very clean natual oxide, removal of this oxide together with contaminants slightly adsorbed on it, and dispersion of remaining contaminants without their developing into defect nuclei.
Abstract: A new surface-cleaning process for Si-MBE, termed Si-beam radiation cleaning (Rad clean), and a model of the cleaning process have been examined. Epitaxial Si layers of high quality have been obtained as a result of the formation of an inactive, very clean natual oxide, removal of this oxide together with contaminants slightly adsorbed on it, and dispersion of remaining contaminants without their developing into defect nuclei. Epitaxial Si layers with etch pit densities of less than 103/cm2 have reproducibly been obtained by carrying out growth at 500°C following the Rad clean process at 800°C for 2 min.

49 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the three stages of nucleation, textured grain growth and secondary grain growth in polycrystalline silicon films by using excimer laser annealing.
Abstract: Recrystallization of polycrystalline silicon (poly-Si) film by excimer laser annealing (ELA) is discussed by considering the experimental results that the three stages of nucleation, textured grain growth and secondary grain growth were observed. Although the phenomenon of nucleation in the amorphous silicon (a-Si) is understood by considering crystallization from the super cooled liquid, the growth mechanisms of the textured grain and secondary grain are not understood by this, because the melting point of poly-Si which has already been formed on the entire surface during these growth stages is higher than that of a-Si. The recrystallization mechanism considering the dislocation movement is introduced to investigate the present phenomenon. It also clarifies the reason why secondary grain growth occurs under the critical conditions of laser irradiation energy and shot number. The feasibility of nucleation through the super cooled liquid is also discussed.

41 citations

Journal ArticleDOI
TL;DR: A roll-to-roll type catalytic chemical vapor deposition (Cat-CVD) was developed for the application to flexible organic light-emitting diode (OLED) displays and packaging.

18 citations

Journal ArticleDOI
TL;DR: The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement in this paper, where an amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN is controlled.
Abstract: The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement. An amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN film is controlled. The grain size increases as the hydrogen concentration decreases, and it partially exceeds 2 µm when the hydrogen concentration of the SiN film is fixed at 2.3 at. %. The relationship between defects at grain boundary and hydrogen is also considered.

18 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of laser plasma soft X-ray (LPX) irradiation on crystallization by excimer laser annealing (ELA) was investigated at low ELA energy densities.
Abstract: The effect of laser plasma soft X-ray (LPX) irradiation on crystallization by excimer laser annealing (ELA) was investigated at low ELA energy densities. The crystalline fraction at energy densities of 50 and 60 mJ/cm2 for LPX followed by ELA is nearly equal to that at 80 to 100 mJ/cm2 for the ELA method with non-LPX irradiation. The results obtained indicate that LPX irradiation before ELA reduces the critical energy density for the start of crystallization. The combined method of LPX irradiation and ELA will enable us to realize a low-temperature process for ELA crystallization.

17 citations


Cited by
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Patent
29 Jun 2007
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Abstract: An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

323 citations

Journal ArticleDOI
TL;DR: In this article, the structural, optical and related properties of inorganic-organic hybrid systems with a semiconductor behavior are reviewed, especially for semiconductor particles, in which the inorganic part is inorganic.

302 citations

Journal ArticleDOI
18 Nov 2010
TL;DR: The fundamental and key phenomena/technologies for spin injection, transport, and manipulation in semiconductors and the integrated circuit applications of spin transistors to nonvolatile logic and reconfigurable logic are described.
Abstract: Spin transistors are a new concept device that unites an ordinary transistor with the useful functions of a spin (magnetoresistive) device. They are expected to be a building block for novel integrated circuits employing spin degrees of freedom. The interesting features of spin transistors are nonvolatile information storage and reconfigurable output characteristics: these are very useful and suitable functionalities for various new integrated circuit architectures that are inaccessible to ordinary transistor circuits. This article reviews the current status and outlook of spin transistors from the viewpoint of integrated circuit applications. The device structure, operating principle, performance, and features of various spin transistors are discussed. The fundamental and key phenomena/technologies for spin injection, transport, and manipulation in semiconductors and the integrated circuit applications of spin transistors to nonvolatile logic and reconfigurable logic are also described.

198 citations

Journal ArticleDOI
TL;DR: In this article, the authors observed matching face relationship is FeSiSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉.
Abstract: Epitaxial thin films of the semiconducting transition metal silicide, beta‐FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 A2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

164 citations

Journal ArticleDOI
TL;DR: In this article, an atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride films on Si is reviewed and the physico-chemical constitution of the involved surfaces and interfaces for each different dielectric material, as well as complementary studies of the gas, gas-surface, and solid phase chemistry.

148 citations