N
Naoyuki Ohse
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 15
Citations - 177
Naoyuki Ohse is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Substrate (electronics) & Layer (electronics). The author has an hindex of 6, co-authored 15 publications receiving 140 citations.
Papers
More filters
Proceedings ArticleDOI
Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
Yusuke Kobayashi,Naoyuki Ohse,Tadao Morimoto,Makoto Kato,Takahito Kojima,Masaki Miyazato,Manabu Takei,Hiroshi Kimura,Shinsuke Harada +8 more
TL;DR: In this article, an SBD-wall-integrated trench MOSFET (SWITCH-MOS) was developed, in which small cell pitch of 5pm was realized by utilizing trench side walls both for SBD and MOS channel with buried p+ layer.
Journal ArticleDOI
1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage
Shinsuke Harada,Yusuke Kobayashi,Akimasa Kinoshita,Naoyuki Ohse,Takahito Kojima,M. Iwaya,Hiromu Shiomi,Hidenori Kitai,Kyogoku Shinya,K. Ariyoshi,Yasuhiko Onishi,Hitoshi Kimura +11 more
TL;DR: In this paper, a SiC UMOSFET is developed to cope with the trade-off between low on-resistance and extremely low gate oxide field, which is known as gate oxide protection.
Patent
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
TL;DR: In this article, the authors proposed a silicon carbide semiconductor device with a gate electrode in the trench via a gate insulating film, and a source electrode in contact with the channel layer and the source region.
Journal ArticleDOI
High Performance SiC IEMOSFET/SBD Module
Shinsuke Harada,Yasuyuki Hoshi,Yuichi Harada,Takashi Tsuji,Akimasa Kinoshita,Mitsuo Okamoto,Youichi Makifuchi,Yasuyuki Kawada,Kouji Imamura,Masahide Gotoh,Takeshi Tawara,Shinichi Nakamata,Takao Sakai,Fumikazu Imai,Naoyuki Ohse,Mina Ryo,Atsushi Tanaka,Kazuo Tezuka,Tatsurou Tsuyuki,Saburou Shimizu,Noriyuki Iwamuro,Yoshiyuki Sakai,Hiroshi Kimura,Kenji Fukuda,Hajime Okumura +24 more
TL;DR: In this paper, a SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD, where the SBD was designed so as to minimize the forward voltage drops and the reverse leakage current.
Journal ArticleDOI
3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability
TL;DR: In this paper, a 3300V-class IEMOSFET was developed by means of the optimization of current spreading layers (CSLs) to achieve low specific on-resistance (RONA) of 11.6mΩcm2, while maintaining high blocking voltage (BVDSS) of 3978V.