N
Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Interfacial Energetics of Silicon in Contact with 11 M NH4F(aq), Buffered HF(aq), 27 M HF(aq), and 18 M H2SO4
TL;DR: In this article, the Mott−Schottky analysis of A_s^2C/(sc)^(-2)-vs-E (where As is the interfacial area, and C_(sc) is the differential capacitance as a function of the electrode potential, E) data yielded reliable barrier heights for some silicon/liquid contacts in this work.
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A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces
Rui Liu,Lihao Han,Lihao Han,Zhuangqun Huang,Ivonne M. Ferrer,Arno H. M. Smets,Miro Zeman,Bruce S. Brunschwig,Nathan S. Lewis +8 more
TL;DR: In this article, atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs.
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Operando X-ray photoelectron spectroscopic investigations of the electrochemical double layer at Ir/KOH(aq) interfaces
Michael F. Lichterman,Matthias H. Richter,Bruce S. Brunschwig,Nathan S. Lewis,Hans Joachim Lewerenz +4 more
TL;DR: In this paper, the energy of the double layer at a metal-water interface in a dilute electrolyte having a Debye length of several nanometers was analyzed by modeling based on Debye-Huckel approximations.
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Controlled Passivation and Luminescence Blue Shifts of Isolated Silicon Nanocrystals
TL;DR: In this paper, the role of the silicon/oxygen interface in low coverage, non-interacting silicon nanocrystal systems was investigated and a comparative study of oxide-and nonoxide-passivated Si nanocrystals was performed.
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Reaction Zone Growth in Ti-Base/SiC Composites
TL;DR: In this paper, reaction zone phases and kinetics over a temperature range of 650-1200°C have been characterized for Ti-14Al-21Nb/SiC and Ti-6Al-2Sn-4Zr-2Mo/SiCs fibrous composites.