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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
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Three-dimensional patterning methods and related devices
Morgan C. Putnam,Michael D. Kelzenberg,Harry A. Atwater,Shannon W. Boettcher,Nathan S. Lewis,Joshua M. Spurgeon,Daniel B. Turner-Evans,Emily L. Warren +7 more
TL;DR: In this article, three-dimensional patterning methods of a 3D microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps.
Proceedings ArticleDOI
Highly absorbing and high lifetime tapered silicon microwire arrays as an alternative for thin film crystalline silicon solar cells
TL;DR: In this paper, the authors reported that ICPRIE etched tapered silicon microwires are ideal light trapping structures with extremely low (1.08% between 400 nm-1100 nm under normal incidence) reflectivity.
Journal ArticleDOI
(Invited) Investigation of the Si/TiO2/Electrolyte Interface Using Operando Tender X-ray Photoelectron Spectroscopy
Michael F. Lichterman,Matthias H. Richter,Shu Hu,Ethan J. Crumlin,Stephanus Axnanda,Marco Favaro,Walter S. Drisdell,Zahid Hussain,Thomas Mayer,Bruce S. Brunschwig,Nathan S. Lewis,Hans Joachim Lewerenz,Zhi Liu +12 more
TL;DR: In this article, the authors demonstrate that X-ray measurements can be obtained on a full three-electrode electrochemical system under potentiostatic control by use of tender X-rays to provide photoelectrons with sufficient kinetic energy to penetrate through a thin electrolyte overlayer on a portion of the working electrode.
Journal ArticleDOI
Comparison of buried oxide in silicon by oxygen implantation made by wafer and beam scanning
TL;DR: In this paper, the authors used transmission electron microscopy and Auger depth profiling to characterize the samples after high-temperature annealing: 1150 °C for 2 h, followed by 1210 C for 6 h.
Journal ArticleDOI
Failure Modes of Platinized pn+-GaInP Photocathodes for Solar-Driven H2 Evolution.
Weilai Yu,Pakpoom Buabthong,James L. Young,Zachary P. Ifkovits,Sean T Byrne,Myles A. Steiner,Todd G. Deutsch,Nathan S. Lewis +7 more
TL;DR: InPn+-GaInP/Pt photocathodes yielded an open-circuit photopotential (Eoc) as positive as >1.0 V vs the potential of the reversible hydrogen electrode (RHE) of >12 mA cm-2 (1-sun illumination) as mentioned in this paper .