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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
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Journal ArticleDOI
Vibrational Sum Frequency Generation Spectroscopy Measurement of the Rotational Barrier of Methyl Groups on Methyl-Terminated Silicon(111) Surfaces.
Dhritiman Bhattacharyya,Angelo Montenegro,Noah T. Plymale,Chayan Dutta,Nathan S. Lewis,Alexander V. Benderskii +5 more
TL;DR: Comparison with the harmonic frequency of a methyl group in a 3-fold cosine potential suggests that the hindered rotation occurs via uncorrelated jumps of single methyl groups rather than concerted gear-like rotation.
Journal ArticleDOI
Powering the planet: Chemical challenges in solar energy utilization (Proceedings of the National Academy of Science of the United States of America (2006) 103, 43, (15729-15735) DOI:10.1073/pnas.0603395103)
Nathan S. Lewis,Daniel G. Nocera +1 more
Proceedings ArticleDOI
Photoelectrochemical characterization of Si microwire array solar cells
TL;DR: In this paper, the methyl viologen regenerative electrochemical system was used to characterize different stages of the fabrication of radial junction Si microwire (SiMW) solar cells, combined with other more traditional measurements, without having to construct a fully integrated device.
Journal ArticleDOI
Influence of Substrates on the Long-Range Order of Photoelectrodeposited Se-Te Nanostructures.
TL;DR: The doping-related effects of the Si substrate on the pattern fidelity of the phototropic Se-Te deposits are ascribable to an electrical effect produced by the different interfacial junction energetics between Se-te and p+-Si versus n-Si that influences the dynamic behavior during phototropic growth at the Se- Te/Si interface.