N
Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Effects of bubbles on the electrochemical behavior of hydrogen-evolving Si microwire arrays oriented against gravity
TL;DR: In this paper, the size distribution, coverage, electrochemical impedance, and mass-transport properties of H2 gas-bubble films were measured for both planar and microwire-array platinized n+-Si cathodes performing the hydrogen-evolution reaction in 0.50 M H2SO4(aq).
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Film thickness dependence of critical current density and microstructure for epitaxial YBa2Cu3O7-x films
TL;DR: In this paper, a simple model based on microstructural observations and the strongly anisotropic transport properties of YBCO is compared with the measurements of room-temperature resistivity and critical current density at 77 K as a function of film thickness.
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Photoeffects at the Semiconductor/Liquid Interface
TL;DR: In this paper, photo effects at semiconductor/liquid interfaces have been studied, and the potential of direct fuel formation and the low cost and ease of junction formation are cited as the most attractive features of these systems.
Patent
Conductive organic sensors, arrays and methods of use
TL;DR: In this article, a class of sensors prepared from regions of conducting organic materials and conducting materials that show an increased sensitivity detection limit for amines was presented. But the sensors were not used for the detection of spoiled food products and in testing for diseases, such as cholera and lung cancer.
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Behavior of Si photoelectrodes under high level injection conditions. 1. Steady-state current-voltage properties and quasi-Fermi level positions under illumination
TL;DR: In this article, the behavior of the quasi-Fermi levels of electrons and holes at various semiconductor/liquid interfaces has been probed through the use of thin, high purity, low dopant density single crystal Si photoelectrodes.