N
Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
More filters
Journal ArticleDOI
Photoanodic behavior of vapor-liquid-solid–grown, lightly doped, crystalline Si microwire arrays
Elizabeth A. Santori,James R. Maiolo,Matthew J. Bierman,Nicholas C. Strandwitz,Michael D. Kelzenberg,Bruce S. Brunschwig,Harry A. Atwater,Nathan S. Lewis +7 more
TL;DR: In this article, the Cu-catalyzed Si microwire array photoanodes exhibited open-circuit voltages of ∼0.44 V, carrier collection efficiencies exceeding ∼ 0.75, and an energy-conversion efficiency of 1.4% under simulated air mass 1.5 G illumination.
Journal ArticleDOI
Chlorination−Methylation of the Hydrogen-Terminated Silicon(111) Surface Can Induce a Stacking Fault in the Presence of Etch Pits
Santiago D. Solares,Hongbin Yu,Lauren J. Webb,Nathan S. Lewis,James R. Heath,William A. Goddard +5 more
TL;DR: The experimental result of 23 degrees is surprising because it suggests a tendency of the methyl group toward the eclipsed configuration rather than staggered, and extensive fully periodic quantum mechanical Density Functional Theory studies of this surface give an equilibrium torsion angle of 37.5 degrees, indicating a tendency toward the staggered configuration.
Journal ArticleDOI
Effect of the Presence of Iodide on the Electron Injection Dynamics of Dye-Sensitized TiO2-Based Solar Cells
TL;DR: In this paper, the electron injection dynamics of dye-sensitized TiO-2-based solar cells have been investigated to determine the effects of replacing the I_3−/I^− redox system by non-redox-active supporting electrolytes.
Journal ArticleDOI
Enhanced Absorption and <1% Spectrum-and-Angle-Averaged Reflection in Tapered Microwire Arrays
Sisir Yalamanchili,Hal S. Emmer,Katherine T. Fountaine,Christopher T. Chen,Nathan S. Lewis,Harry A. Atwater +5 more
TL;DR: In this article, the authors reported ordered, high aspect ratio, tapered Si microwire arrays that exhibit an extremely low angular (0° to 50°) and spectrally averaged reflectivity of < 1% of the incident 400-1100 nm illumination.
Journal ArticleDOI
High‐temperature annealing of implanted buried oxide in silicon
TL;DR: In this article, a silicon-on-insulator structure was formed by implanting 2×1018 oxygen ions cm−2 into crystalline silicon at 150 keV, and the effect of annealing temperature on the microstructure and oxygen concentration profile was investigated by using cross-sectional transmission-electron microscopy and Auger analysis.