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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
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Passivation of GaAs nanocrystals by chemical functionalization.
TL;DR: The band gap photoluminescence (PL) was weak from the Cl- and hydrazine- or sulfide-terminated nanocrystal, but the annealed nanocrystals displayed strongly enhanced band-edge PL, indicating that the surface states of GaAs nanocry crystals were effectively passivated by this two-step, wet chemical treatment.
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Effects of surface condition on the work function and valence-band position of ZnSnN 2
TL;DR: In this article, the authors reported the characterization of reactively radio-frequency sputtered II-IV-nitride ZnSnN-2 thin films and showed that the degenerate bulk Fermi level position shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap.
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Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts
TL;DR: In this paper, it was shown that Si/liquid contacts that displayed a low effective surface recombination velocity S corresponded to those that formed an inversion layer at the solid/liquid contact as indicated by channel conductance measurements or by differential capacitance versus potential measurements.
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Stabilization of n-type silicon photoanodes in aqueous solution by electrostatic binding of redox ions into charged polymers
TL;DR: Etude experimentale de la stabilisation de photoanodes au silicium de type n a revetement de polymere par liaison electrostatique d'ions actifs du point de vue oxydoreduction as mentioned in this paper.
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Effects of metal ion chemisorption on gallium arsenide surface recombination: picosecond luminescence decay measurements
TL;DR: In this paper, the luminescence decay dynamics of thin epilayer GaAs samples under high level injection conditions were monitored in contact with KOHSe^(-/2-)(aq) solutions.