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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Correlation of the Photoelectrochemistry of the Amorphous Hydrogenated Silicon/Methanol Interface with Bulk Semiconductor Properties
TL;DR: In this paper, a-Si:H anodes in 0.5 µm LiClO/sub 4/0/CH/sub 3/OH solvent were investigated and shown to exhibit low short-circuit quantum yields and low fill factors with 632.8 nm irradiation.
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Comparisons Between Mammalian and Artificial Olfaction Based on Arrays of Carbon Black—Polymer Composite Vapor Detectors
TL;DR: In this article, a man-made implementation of an olfactory system is presented, in which an analyte elicits a response from many receptors and each receptor responds to a variety of analytes.
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Would firm generators facilitate or deter variable renewable energy in a carbon-free electricity system?
Mengyao Yuan,Fan Tong,Fan Tong,Lei Duan,Jacqueline A. Dowling,Steven J. Davis,Nathan S. Lewis,Ken Caldeira +7 more
TL;DR: In this paper, the authors investigated whether low-cost, firm, zero-carbon electricity generation technologies enhance or displace the deployment of variable renewable electricity generation technology in a least cost, fully reliable, and deeply decarbonized electricity system.
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Conformal SnOx heterojunction coatings for stabilized photoelectrochemical water oxidation using arrays of silicon microcones
Ivan A. Moreno-Hernandez,Sisir Yalamanchili,Harold J. Fu,Harry A. Atwater,Bruce S. Brunschwig,Nathan S. Lewis +5 more
TL;DR: In this article, the tin oxide (SnOx) layer is formed by atomic layer deposition that limits surface recombination at n-Si/SnOx heterojunctions and produces ∼620 mV of photovoltage on planar nSi photoanodes.
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A Mechanistic Study of the Oxidative Reaction of Hydrogen-Terminated Si(111) Surfaces with Liquid Methanol
TL;DR: In this paper, the oxidant-activated methoxylation of H-Si(111) surfaces was observed in the dark after exposure to CH3OH solutions that contained the one-electron oxidants acetylferrocenium, ferrocenium or 1,1′-dimethylferrrocenium.