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Nengli Dai
Researcher at Huazhong University of Science and Technology
Publications - 231
Citations - 1809
Nengli Dai is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Fiber laser & Laser. The author has an hindex of 18, co-authored 205 publications receiving 1497 citations. Previous affiliations of Nengli Dai include Xinyang Normal University & Chinese Academy of Sciences.
Papers
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Effect of Bi 2 O 3 on the spectroscopic properties of erbium-doped bismuth silicate glasses
TL;DR: In this paper, the authors investigated the spectroscopic properties of erbium-doped silicon dioxide, bismuth oxide, and sodium oxide glasses based on Judd-Ofelt analysis for absorption spectra, bandwidth analysis for emission spectra and lifetime measurements of the 4I13/2 level of Er3+.
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Investigation on nonradiative decay of 4I13/2→-4I15/2 transition of Er3+-doped oxide glasses
TL;DR: In this paper, the effects of glass matrix on the decay rate were discussed from the viewpoint of phonon energy, variations of effective fields, and OH − groups in a series of oxide glasses.
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Efficient near-infrared quantum cutting in Ce3+–Yb3+ codoped glass for solar photovoltaic
TL;DR: In this paper, the authors reported that Ce 3+ can be an efficient sensitizer for Yb 3+ and a broadband absorber for blue solar spectra, which can be used as down-conversion (DC) layer for solar cells.
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Ce-Tb-Mn co-doped white light emitting glasses suitable for long-wavelength UV excitation.
Yang Yu,Zijun Liu,Nengli Dai,Yubang Sheng,Huaixun Luan,Jinggang Peng,Zuowen Jiang,Haiqing Li,Jinyan Li,Luyun Yang +9 more
TL;DR: A new kind of white light emitting glass suitable for long-wavelength ultraviolet excitation by simultaneously emitting blue, green and red fluorescence, which is fabricated by melting of Ce(3+))-Tb(3+)-Mn(2+) co-doped borosilicate glass is reported.
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The grain size effect of the Pb(Zr0.45Ti0.55)O3 thin films deposited on LaNiO3-coated silicon by modified sol–gel process
TL;DR: In this paper, the growth mechanism of PZT thin films with high (1/0/0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed.