Neophytos Neophytou

Bio: Neophytos Neophytou is an academic researcher from University of Warwick. The author has contributed to research in topics: Thermoelectric materials & Seebeck coefficient. The author has an hindex of 30, co-authored 175 publications receiving 3515 citations. Previous affiliations of Neophytos Neophytou include Purdue University & Stony Brook University.

Thermoelectrics: From history, a window to the future

Abstract: Thermoelectricity offers a sustainable path to recover and convert waste heat into readily available electric energy, and has been studied for more than two centuries. From the controversy between Galvani and Volta on the Animal Electricity, dating back to the end of the XVIII century and anticipating Seebeck’s observations, the understanding of the physical mechanisms evolved along with the development of the technology. In the XIX century Orsted clarified some of the earliest observations of the thermoelectric phenomenon and proposed the first thermoelectric pile, while it was only after the studies on thermodynamics by Thomson, and Rayleigh’s suggestion to exploit the Seebeck effect for power generation, that a diverse set of thermoelectric generators was developed. From such pioneering endeavors, technology evolved from massive, and sometimes unreliable, thermopiles to very reliable devices for sophisticated niche applications in the XX century, when Radioisotope Thermoelectric Generators for space missions and nuclear batteries for cardiac pacemakers were introduced. While some of the materials adopted to realize the first thermoelectric generators are still investigated nowadays, novel concepts and improved understanding of materials growth, processing, and characterization developed during the last 30 years have provided new avenues for the enhancement of the thermoelectric conversion efficiency, for example through nanostructuration, and favored the development of new classes of thermoelectric materials. With increasing demand for sustainable energy conversion technologies, the latter aspect has become crucial for developing thermoelectrics based on abundant and non-toxic materials, which can be processed at economically viable scales, tailored for different ranges of temperature. This includes high temperature applications where a substantial amount of waste energy can be retrieved, as well as room temperature applications where small and local temperature differences offer the possibility of energy scavenging, as in micro harvesters meant for distributed electronics such as sensor networks. While large scale applications have yet to make it to the market, the richness of available and emerging thermoelectric technologies presents a scenario where thermoelectrics is poised to contribute to a future of sustainable future energy harvesting and management. This work reviews the broad field of thermoelectrics. Progress in thermoelectrics and milestones that led to the current state-of-the-art are presented by adopting an historical footprint. The review begins with an historical excursus on the major steps in the history of thermoelectrics, from the very early discovery to present technology. Then, the most promising thermoelectric material classes are discussed one by one in dedicated sections and subsections, carefully highlighting the technological solutions on materials growth that have represented a turning point in the research on thermoelectrics. Finally, perspectives and the future of the technology are discussed in the framework of sustainability and environmental compatibility. An appendix on the theory of thermoelectric transport in the solid state reviews the transport theory in complex crystal structures and nanostructured materials.

Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Abstract: The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. Calculation of the bandstructure of nanoribbons using a single pz-orbital tight-binding method and evaluation of the current-voltage characteristics of a nanoribbon MOSFET were used in a semiclassical ballistic model. The authors find that semiconducting ribbons a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. The calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications

Bandstructure Effects in Silicon Nanowire Electron Transport

Abstract: Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semiempirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the dispersion calculation. A semi-classical, ballistic FET model is used to evaluate the current-voltage characteristics. It is found that the total gate capacitance is degraded from the oxide capacitance value by 30% for wires in all the considered transport orientations ([100], [110], [111]). Different wire directions primarily influence the carrier velocities, which mainly determine the relative performance differences, while the total charge difference is weakly affected. The velocities depend on the effective mass and degeneracy of the dispersions. The [110] and secondly the [100] oriented 3 nm thick nanowires examined, indicate the best ON-current performance compared to [111] wires. The dispersion features are strong functions of quantization. Effects such as valley splitting can lift the degeneracies particularly for wires with cross section sides below 3 nm. The effective masses also change significantly with quantization, and change differently for different transport orientations. For the cases of [100] and [111] wires the masses increase with quantization, however, in the [110] case, the mass decreases. The mass variations can be explained from the non-parabolicities and anisotropies that reside in the first Brillouin zone of silicon.

Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

Abstract: A real-space quantum transport simulator for graphene nanoribbon (GNR) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been developed and used to examine the ballistic performance of GNR MOSFETs. This study focuses on the impact of quantum effects on these devices and on the effect of different type of contacts. We found that two-dimensional (2D) semi-infinite graphene contacts produce metal-induced-gap states (MIGS) in the GNR channel. These states enhance quantum tunneling, particularly in short channel devices, they cause Fermi level pinning and degrade the device performance in both the ON-state and OFF-state. Devices with infinitely long contacts having the same width as the channel do not indicate MIGS. Even without MIGS quantum tunneling effects such as band-to-band tunneling still play an important role in the device characteristics and dominate the OFF-state current. This is accurately captured in our nonequilibrium Greens’ function quantum simulations. We show that both narrow (...

Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

Abstract: A large thermoelectric power factor in heavily boron-doped p-type nanograined Si with grain sizes ~30 nm and grain boundary regions of ~2 nm is reported. The reported power factor is ~5 times higher than in bulk Si. It originates from the surprising observation that for a specific range of carrier concentrations, the electrical conductivity and Seebeck coefficient increase simultaneously. The two essential ingredients for this observation are nanocrystallinity and extremely high boron doping levels. This experimental finding is interpreted within a theoretical model that considers both electron and phonon transport within the semiclassical Boltzmann approach. It is shown that transport takes place through two phases so that high conductivity is achieved in the grains, and high Seebeck coefficient by the grain boundaries. This together with the drastic reduction in the thermal conductivity due to boundary scattering could lead to a significant increase of the figure of merit ZT. This is one of the rare observations of a simultaneous increase in the electrical conductivity and Seebeck coefficient, resulting in enhanced thermoelectric power factor.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Phd by thesis

Abstract: Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

Abstract: We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature.