Nibir K. Dhar

Bio: Nibir K. Dhar is an academic researcher from United States Department of the Army. The author has contributed to research in topics: Dark current & Photodetector. The author has an hindex of 22, co-authored 227 publications receiving 1922 citations. Previous affiliations of Nibir K. Dhar include United States Army Research Laboratory & DARPA.

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Abstract: One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges In particular, we present an ultrafast surface-illuminated PD with 114-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible mass-manufacturable device fabrication Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application

Atomically thin layers of B-N-C-O with tunable composition.

Abstract: In recent times, atomically thin alloys of boron, nitrogen, and carbon have generated significant excitement as a composition-tunable two-dimensional (2D) material that demonstrates rich physics as well as application potentials. The possibility of tunably incorporating oxygen, a group VI element, into the honeycomb sp 2 -type 2D-BNC lattice is an intriguing idea from both fundamental and applied perspectives. We present the first report on an atomically thin quaternary alloy of boron, nitrogen, carbon, and oxygen (2D-BNCO). Our experiments suggest, and density functional theory (DFT) calculations corroborate, stable configurations of a honeycomb 2D-BNCO lattice. We observe micrometer-scale 2D-BNCO domains within a graphene-rich 2D-BNC matrix, and are able to control the area coverage and relative composition of these domains by varying the oxygen content in the growth setup. Macroscopic samples comprising 2D-BNCO domains in a graphene-rich 2D-BNC matrix show graphene-like gate-modulated electronic transport with mobility exceeding 500 cm 2 V −1 s −1 , and Arrhenius-like activated temperature dependence. Spin-polarized DFT calculations for nanoscale 2D-BNCO patches predict magnetic ground states originating from the B atoms closest to the O atoms and sizable (0.6 eV E g

Advances in Infrared Detector Array Technology

Abstract: This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wave‐ length Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technol‐ ogies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers’ enhanced vision, machine vision and a multi‐ tude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs).

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Abstract: Tellurium adsorption studies were made on clean and arsenic passivated (112) silicon surfaces. Quantitative surface coverage values for tellurium were determined by Auger electron spectroscopy. Saturation coverage of up to 1.2 monolayers of tellurium could be obtained on a clean (112) silicon surface. On an arsenic passivated (112) Si surface however, the tellurium saturation coverage was limited to only ∼0.3 monolayer. Analysis of the adsorption behavior suggested that tellurium and arsenic chemisorption occurs preferentially at step edges and on terraces, respectively. The study revealed that arsenic passivation led to a significant decrease in the sticking coefficient of tellurium and an increase in it’s surface mobility. A model describing zinc telluride nucleation on a (112) Si surface is proposed. Thin templates of ZnTe followed by Cd1−xZnxTe layers were deposited on (112) Si by molecular beam epitaxy (MBE). The characteristics of the MBE Cd1−xZnxTe layers were found to be sensitive to the initial ZnTe nucleation and Si surface preparation.

Computer vision : a modern approach = 计算机视觉 : 一种现代的方法

Abstract: From the Publisher: The accessible presentation of this book gives both a general view of the entire computer vision enterprise and also offers sufficient detail to be able to build useful applications. Users learn techniques that have proven to be useful by first-hand experience and a wide range of mathematical methods. A CD-ROM with every copy of the text contains source code for programming practice, color images, and illustrative movies. Comprehensive and up-to-date, this book includes essential topics that either reflect practical significance or are of theoretical importance. Topics are discussed in substantial and increasing depth. Application surveys describe numerous important application areas such as image based rendering and digital libraries. Many important algorithms broken down and illustrated in pseudo code. Appropriate for use by engineers as a comprehensive reference to the computer vision enterprise.

Prospects of Nanoscience with Nanocrystals

Abstract: Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today’s strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. The performance of inorganic NC-based photovoltaic and light-emitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenom...

Ion and electron irradiation-induced effects in nanostructured materials

Abstract: A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the t...

HgCdTe infrared detector material: history, status and outlook

Abstract: This article reviews the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications. HgCdTe IR detectors have been intensively developed since the first synthesis of this material in 1958. This article summarizes the fundamental properties of this versatile narrow gap semiconductor, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Competitive technologies to HgCdTe ternary alloy are also presented. Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled a third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology. Finally, evaluation of HgCdTe for room temperature long wavelength IR applications is presented. (Some figures in this article are in colour only in the electronic version)