Nicholas Petrone

TL;DR: With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.

TL;DR: This work demonstrates field-effect transistors with MoS2 channels, hBN dielectric, and graphene gate electrodes, and takes advantage of the mechanical strength and flexibility of these materials to create flexible and transparent FETs that show unchanged performance up to 1.5% strain.

TL;DR: It is shown that the elastic stiffness of CVD-graphene is identical to that of pristine graphene if postprocessing steps avoid damage or rippling, and its strength is only slightly reduced despite the existence of grain boundaries.

TL;DR: In this article, the authors demonstrate the exceptionally high third-order nonlinearity of integrated mono-layer graphene-silicon hybrid optoelectronics, enabling ultralow power resonant optical bistability, self-induced regenerative oscillations, and coherent four-wave mixing, all at few femtojoule cavity recirculating energies.

TL;DR: The electrical transport properties of CVD-grown graphene are tested in which two important sources of disorder, namely grain boundaries and processing-induced contamination, are substantially reduced, confirming the possibility of achieving high-performance graphene devices based on a scalable synthesis process.