Nicola A. Hill

Bio: Nicola A. Hill is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Ferromagnetism & Magnetic semiconductor. The author has an hindex of 20, co-authored 26 publications receiving 5752 citations.

Why Are There so Few Magnetic Ferroelectrics

Abstract: Multiferroic magnetoelectrics are materials that are both ferromagnetic and ferroelectric in the same phase. As a result, they have a spontaneous magnetization that can be switched by an applied magnetic field, a spontaneous polarization that can be switched by an applied electric field, and often some coupling between the two. Very few exist in nature or have been synthesized in the laboratory. In this paper, we explore the fundamental physics behind the scarcity of ferromagnetic ferroelectric coexistence. In addition, we examine the properties of some known magnetically ordered ferroelectric materials. We find that, in general, the transition metal d electrons, which are essential for magnetism, reduce the tendency for off-center ferroelectric distortion. Consequently, an additional electronic or structural driving force must be present for ferromagnetism and ferroelectricity to occur simultaneously.

Visualizing the Role of Bi 6s “Lone Pairs” in the Off-Center Distortion in Ferromagnetic BiMnO3

Abstract: Results of first-principles electronic structure calculations on the low-temperature monoclinic phase of the ferromagnetic perovskite BiMnO3 [Atou et al. J. Solid State Chem. 1999, 145, 639] are presented. In agreement with experiments, the calculations obtain an insulating ferromagnetic ground state for this material. The role of Bi 6s “lone pairs” in stabilizing the highly distorted perovskite structure is examined using real-space visualization of the electronic structure. Comparisons are drawn with the electronic structures of hypothetical cubic BiMnO3 and with the electronic structure of the prototypical perovskite manganite, LaMnO3. The exploitation of s electron lone pairs in the design of new ferroic materials is suggested.

First-principles investigation of ferromagnetism and ferroelectricity in bismuth manganite

Abstract: We present results of local spin density approximation (LSDA) pseudopotential calculations for the perovskite structure oxide, bismuth manganite (BiMnO3). The origin of the differences between bismuth manganite and other perovskite manganites is determined by first calculating total energies and band structures of the high symmetry cubic phase, then sequentially lowering the magnetic and structural symmetry. Our results indicate that covalent bonding between bismuth cations and oxygen anions stabilizes different magnetic and structural phases compared with the rare earth manganites. This is consistent with recent experimental results showing enhancement of charge ordering in doped bismuth manganite.

First-principles study of the origin and nature of ferromagnetism in Ga 1-x Mn x As

Abstract: The properties of diluted ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ are calculated for a wide range of Mn concentrations within the local-spin-density approximation of density-functional theory. M\"ulliken population analyses and orbital-resolved densities of states show that the configuration of Mn in GaAs is compatible with either ${3d}^{5}$ or ${3d}^{6};$ however, the occupation is not integer due to the large p-d hybridization between the Mn d states and the valence band of GaAs. The spin splitting of the conduction band of GaAs has a mean-field-like linear variation with the Mn concentration, and indicates ferromagnetic coupling with the Mn ions. In contrast, the valence band is antiferromagnetically coupled with the Mn impurities, and the spin splitting is not linearly dependent on the Mn concentration. This suggests that the mean-field approximation breaks down in the case of Mn-doped GaAs, and corrections due to multiple scattering must be considered. We calculate these corrections within a simple free-electron model, and find good agreement with our ab initio results if a large exchange constant $(N\ensuremath{\beta}=\ensuremath{-}4.5\mathrm{eV})$ is assumed.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Spintronics: Fundamentals and applications

Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

Multiferroic and magnetoelectric materials

Abstract: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.

Epitaxial BiFeO3 multiferroic thin film heterostructures.

Abstract: Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.

Revival of the Magnetoelectric Effect

Abstract: Recent research activities on the linear magnetoelectric (ME) effect?induction of magnetization by an electric field or of polarization by a magnetic field?are reviewed. Beginning with a brief summary of the history of the ME effect since its prediction in 1894, the paper focuses on the present revival of the effect. Two major sources for 'large' ME effects are identified. (i) In composite materials the ME effect is generated as a product property of a magnetostrictive and a piezoelectric compound. A linear ME polarization is induced by a weak ac magnetic field oscillating in the presence of a strong dc bias field. The ME effect is large if the ME coefficient coupling the magnetic and electric fields is large. Experiments on sintered granular composites and on laminated layers of the constituents as well as theories on the interaction between the constituents are described. In the vicinity of electromechanical resonances a ME voltage coefficient of up to 90?V?cm?1?Oe?1 is achieved, which exceeds the ME response of single-phase compounds by 3?5 orders of magnitude. Microwave devices, sensors, transducers and heterogeneous read/write devices are among the suggested technical implementations of the composite ME effect. (ii) In multiferroics the internal magnetic and/or electric fields are enhanced by the presence of multiple long-range ordering. The ME effect is strong enough to trigger magnetic or electrical phase transitions. ME effects in multiferroics are thus 'large' if the corresponding contribution to the free energy is large. Clamped ME switching of electrical and magnetic domains, ferroelectric reorientation induced by applied magnetic fields and induction of ferromagnetic ordering in applied electric fields were observed. Mechanisms favouring multiferroicity are summarized, and multiferroics in reduced dimensions are discussed. In addition to composites and multiferroics, novel and exotic manifestations of ME behaviour are investigated. This includes (i) optical second harmonic generation as a tool to study magnetic, electrical and ME properties in one setup and with access to domain structures; (ii) ME effects in colossal magnetoresistive manganites, superconductors and phosphates of the LiMPO4 type; (iii) the concept of the toroidal moment as manifestation of a ME dipole moment; (iv) pronounced ME effects in photonic crystals with a possibility of electromagnetic unidirectionality. The review concludes with a summary and an outlook to the future development of magnetoelectrics research.