N
Nicolas Eustathopoulos
Publications - 5
Citations - 903
Nicolas Eustathopoulos is an academic researcher. The author has contributed to research in topics: Substrate (electronics) & Silicon. The author has an hindex of 2, co-authored 5 publications receiving 889 citations.
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Wettability at high temperatures
TL;DR: Wetting properties of metal and non-metallic compounds have been studied in this paper, where surface and interfacial energies in solid / liquid / vapour systems have been analyzed.
Patent
Substrat composite a base de silicium presentant des zones actives separees par des zones d'isolation electrique comportant un feuillard en carbure de silicium
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this article, the authors concerne un tel substrat composite (1) a base de silicium, presentant, dans un plan vertical de coupe, des zones actives (10) de silica dope p et/ou dope n, chacune des actives s'etendant sur toute l'epaisseur (e) du substrat, deux zones active etant separees entre elles par au moins une zone d'isolation electrique (20) formee d'un fe
Patent
Silicon-based composite substrate having active zones separated by electrical insulation zones comprising a silicon carbide strip
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this article, the authors proposed a silicon-based composite substrate with active zones of p-doped and/or ndoped silicon, each of the active zones extending through the entire thickness of the substrate, two active zones being separated from one another by at least one electrical insulation zone formed by a silicon carbide strip.
Patent
Silicon-based composite substrate having active zones separated by silicon-oxide-based electrical insulation zones
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this paper, the authors proposed a silicon-based composite substrate with active zones (10) of p-doped and/or ndoped silicon, each of the active zones extending through the entire thickness of the substrate, two active zones being separated from one another by at least one electrical insulation zone (20) having a mass content of silicon oxide SiO 2 greater than or equal to 50 %.
Patent
Substrat composite a base de silicium presentant des zones actives separees par des zones d'isolation electrique a base d'oxyde de silicium
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this paper, the authors concerne encore des procedes de fabrication d'un tel substrat composite (1) a base de silicium, presentant, dans un plan vertical de coupe, des zones actives (10) de Silicium dope p et/ou dope n, chacune des actives s'etendant sur toute l'epaisseur (e) du substrat, deux zones active etant separees entre elles par au moins une zone d'isolation elect