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Nikolaos Papandreou

Other affiliations: University of Patras
Bio: Nikolaos Papandreou is an academic researcher from IBM. The author has contributed to research in topics: Phase-change memory & Non-volatile memory. The author has an hindex of 22, co-authored 143 publications receiving 2170 citations. Previous affiliations of Nikolaos Papandreou include University of Patras.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching.
Abstract: We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high–temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration by the combination of PCM and 3D-capable access devices, and through multiple bits per cell, by understanding and managing resistance drift caused by structural relaxation of the amorphous phase. We also briefly survey work in the nascent field of brain-inspired neuromorphic systems that use PCM to implement non-Von Neumann computing.

302 citations

Journal ArticleDOI
TL;DR: In this article, the authors present an experimental demonstration using one million phase change memory devices organized to perform a high-level computational primitive by exploiting the crystallization dynamics, which is imprinted in the conductance states of the memory devices.
Abstract: Conventional computers based on the von Neumann architecture perform computation by repeatedly transferring data between their physically separated processing and memory units. As computation becomes increasingly data centric and the scalability limits in terms of performance and power are being reached, alternative computing paradigms with collocated computation and storage are actively being sought. A fascinating such approach is that of computational memory where the physics of nanoscale memory devices are used to perform certain computational tasks within the memory unit in a non-von Neumann manner. We present an experimental demonstration using one million phase change memory devices organized to perform a high-level computational primitive by exploiting the crystallization dynamics. Its result is imprinted in the conductance states of the memory devices. The results of using such a computational memory for processing real-world data sets show that this co-existence of computation and storage at the nanometer scale could enable ultra-dense, low-power, and massively-parallel computing systems. New computing paradigms, such as in-memory computing, are expected to overcome the limitations of conventional computing approaches. Sebastian et al. report a large-scale demonstration of computational phase change memory (PCM) by performing high-level computational primitives using one million PCM devices.

168 citations

Proceedings ArticleDOI
22 May 2011
TL;DR: In this article, an alternative way to cope with drift in phase-change memory (PCM) is introduced, based on modulation coding, which encodes information in the relative order of resistance levels in a codeword.
Abstract: Multilevel-cell (MLC) storage is a typical way for achieving increased capacity and thus lower cost-per-bit in memory technologies. In phase-change memory (PCM), however, MLC storage is seriously hampered by the phenomenon of resistance drift. Reference cells may be used to offer some relief, however their effectiveness is limited due to the stochastic nature of drift. In this paper, an alternative way to cope with drift in PCM is introduced, based on modulation coding. The new drift tolerant coding technique encodes information in the relative order of resistance levels in a codeword. Experimental results from a 90-nm PCM prototype chip demonstrate the effectiveness of the proposed method in offering high resilience to drift. Most notably, 4 levels/cell storage with raw bit-error-rates in the order of 10 -5 is achieved in a 200 kcell array and maintained for over 30 days after programming at room temperature.

151 citations

Journal ArticleDOI
TL;DR: The main classes of loading problems, namely, rate maximization and margin maximization, are presented, and their optimal solutions for the single-user case are discussed, and various ideas for low-complexity loading algorithms are highlighted.
Abstract: Multicarrier modulation is a powerful transmission technique that provides improved performance in various communication fields. A fundamental topic of multicarrier communication systems is the bit and power loading, which is addressed in this article as a constrained multivariable nonlinear optimization problem. In particular, we present the main classes of loading problems, namely, rate maximization and margin maximization, and we discuss their optimal solutions for the single-user case. Initially, the classical water-filling solution subject to a total power constraint is presented using the Lagrange multipliers optimization approach. Next, the peak-power constraint is included and the concept of cup-limited waterfilling is introduced. The loading problem is also addressed subject to the integer-bit restriction and the optimal discrete solution is examined using combinatorial optimization methods. Furthermore, we investigate the duality conditions of the rate maximization and margin maximization problems and we highlight various ideas for low-complexity loading algorithms. This article surveys and reviews existing results on resource allocation in constrained multicarrier systems and presents new trends in this area.

137 citations

Proceedings ArticleDOI
15 May 2011
TL;DR: The proposed schemes are based on iterative write-and-verify algorithms that exploit the unique programming characteristics of PCM in order to achieve significant improvements in resistance-level packing density, robustness to cell variability, programming latency, energy-per-bit and cell storage capacity.
Abstract: Phase-change memory (PCM) has emerged as one among the most promising technologies for next-generation nonvolatile solid-state memory. Multilevel storage, namely storage of non-binary information in a memory cell, is a key factor for reducing the total cost-per-bit and thus increasing the competitiveness of PCM technology in the nonvolatile memory market. In this paper, we present a family of advanced programming schemes for multilevel storage in PCM. The proposed schemes are based on iterative write-and-verify algorithms that exploit the unique programming characteristics of PCM in order to achieve significant improvements in resistance-level packing density, robustness to cell variability, programming latency, energy-per-bit and cell storage capacity. Experimental results from PCM test-arrays are presented to validate the proposed programming schemes. In addition, the reliability issues of multilevel PCM in terms of resistance drift and read noise are discussed.

118 citations


Cited by
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Journal ArticleDOI
01 Jun 2018
TL;DR: This Review Article examines the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, theirresistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation.
Abstract: Modern computers are based on the von Neumann architecture in which computation and storage are physically separated: data are fetched from the memory unit, shuttled to the processing unit (where computation takes place) and then shuttled back to the memory unit to be stored. The rate at which data can be transferred between the processing unit and the memory unit represents a fundamental limitation of modern computers, known as the memory wall. In-memory computing is an approach that attempts to address this issue by designing systems that compute within the memory, thus eliminating the energy-intensive and time-consuming data movement that plagues current designs. Here we review the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, their resistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation. We examine the different digital, analogue, and stochastic computing schemes that have been proposed, and explore the microscopic physical mechanisms involved. Finally, we discuss the challenges in-memory computing faces, including the required scaling characteristics, in delivering next-generation computing. This Review Article examines the development of in-memory computing using resistive switching devices.

1,193 citations

Journal ArticleDOI
27 Nov 2019-Nature
TL;DR: An overview of the developments in neuromorphic computing for both algorithms and hardware is provided and the fundamentals of learning and hardware frameworks are highlighted, with emphasis on algorithm–hardware codesign.
Abstract: Guided by brain-like ‘spiking’ computational frameworks, neuromorphic computing—brain-inspired computing for machine intelligence—promises to realize artificial intelligence while reducing the energy requirements of computing platforms. This interdisciplinary field began with the implementation of silicon circuits for biological neural routines, but has evolved to encompass the hardware implementation of algorithms with spike-based encoding and event-driven representations. Here we provide an overview of the developments in neuromorphic computing for both algorithms and hardware and highlight the fundamentals of learning and hardware frameworks. We discuss the main challenges and the future prospects of neuromorphic computing, with emphasis on algorithm–hardware codesign. The authors review the advantages and future prospects of neuromorphic computing, a multidisciplinary engineering concept for energy-efficient artificial intelligence with brain-inspired functionality.

877 citations

Journal ArticleDOI
08 May 2019-Nature
TL;DR: An optical version of a brain-inspired neurosynaptic system, using wavelength division multiplexing techniques, is presented that is capable of supervised and unsupervised learning.
Abstract: Software implementations of brain-inspired computing underlie many important computational tasks, from image processing to speech recognition, artificial intelligence and deep learning applications. Yet, unlike real neural tissue, traditional computing architectures physically separate the core computing functions of memory and processing, making fast, efficient and low-energy computing difficult to achieve. To overcome such limitations, an attractive alternative is to design hardware that mimics neurons and synapses. Such hardware, when connected in networks or neuromorphic systems, processes information in a way more analogous to brains. Here we present an all-optical version of such a neurosynaptic system, capable of supervised and unsupervised learning. We exploit wavelength division multiplexing techniques to implement a scalable circuit architecture for photonic neural networks, successfully demonstrating pattern recognition directly in the optical domain. Such photonic neurosynaptic networks promise access to the high speed and high bandwidth inherent to optical systems, thus enabling the direct processing of optical telecommunication and visual data. An optical version of a brain-inspired neurosynaptic system, using wavelength division multiplexing techniques, is presented that is capable of supervised and unsupervised learning.

862 citations

Journal ArticleDOI
TL;DR: This Review provides an overview of memory devices and the key computational primitives enabled by these memory devices as well as their applications spanning scientific computing, signal processing, optimization, machine learning, deep learning and stochastic computing.
Abstract: Traditional von Neumann computing systems involve separate processing and memory units. However, data movement is costly in terms of time and energy and this problem is aggravated by the recent explosive growth in highly data-centric applications related to artificial intelligence. This calls for a radical departure from the traditional systems and one such non-von Neumann computational approach is in-memory computing. Hereby certain computational tasks are performed in place in the memory itself by exploiting the physical attributes of the memory devices. Both charge-based and resistance-based memory devices are being explored for in-memory computing. In this Review, we provide a broad overview of the key computational primitives enabled by these memory devices as well as their applications spanning scientific computing, signal processing, optimization, machine learning, deep learning and stochastic computing. This Review provides an overview of memory devices and the key computational primitives for in-memory computing, and examines the possibilities of applying this computing approach to a wide range of applications.

841 citations

Journal ArticleDOI
TL;DR: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy with real-time switching energy.
Abstract: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy.

806 citations