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Nikoleta Theodoropoulou
Researcher at University of Florida
Publications - 46
Citations - 3958
Nikoleta Theodoropoulou is an academic researcher from University of Florida. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 21, co-authored 45 publications receiving 3855 citations. Previous affiliations of Nikoleta Theodoropoulou include Massachusetts Institute of Technology.
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Wide band gap ferromagnetic semiconductors and oxides
Stephen J. Pearton,Cammy R. Abernathy,M. E. Overberg,G. T. Thaler,David P. Norton,Nikoleta Theodoropoulou,Arthur F. Hebard,Yun Daniel Park,Fan Ren,Jihyun Kim,Lynn A. Boatner +10 more
TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
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Synthesis and Characterization of Silica-Coated Iron Oxide Nanoparticles in Microemulsion: The Effect of Nonionic Surfactants
Swadeshmukul Santra,Rovelyn Tapec,Nikoleta Theodoropoulou,Jon Dobson,and Arthur Hebard,Weihong Tan +5 more
TL;DR: In this paper, a water-in-oil microemulsion method has been applied for the preparation of silica-coated iron oxide nanoparticles, and their effects on the particle size, crystallinity, and the magnetic properties have been studied.
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Ferromagnetism in Mn-implanted ZnO:Sn single crystals
David P. Norton,Stephen J. Pearton,Arthur F. Hebard,Nikoleta Theodoropoulou,Lynn A. Boatner,Robert G. Wilson +5 more
TL;DR: In this article, the magnetic properties of Mn-implanted n-type ZnO single crystals that are codoped with Sn were investigated, and it was shown that the Mn concentration to 5 at.
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Magnetic and structural properties of Mn-implanted GaN
Nikoleta Theodoropoulou,Arthur F. Hebard,M. E. Overberg,Cammy R. Abernathy,Stephen J. Pearton,S. N. G. Chu,Robert G. Wilson +6 more
TL;DR: In this paper, high doses (1015−5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350°C and annealed at 700−1000°C.
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Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
M. E. Overberg,Cammy R. Abernathy,Stephen J. Pearton,Nikoleta Theodoropoulou,K. T. McCarthy,Arthur F. Hebard +5 more
TL;DR: Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported in this article, which shows the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaNN.