N
Nils Weimann
Researcher at University of Duisburg-Essen
Publications - 160
Citations - 7764
Nils Weimann is an academic researcher from University of Duisburg-Essen. The author has contributed to research in topics: Heterojunction bipolar transistor & Bipolar junction transistor. The author has an hindex of 27, co-authored 160 publications receiving 7215 citations. Previous affiliations of Nils Weimann include Alcatel-Lucent & Agere Systems.
Papers
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Journal ArticleDOI
Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction: A new approach to thermoelectric materials and generators
TL;DR: In this article, the authors demonstrate that thermally excited bipolar charge carriers can be separated by the built-in field without external bias within a p-n junction, which is known as the Seebeck effect.
Proceedings ArticleDOI
A high-gain InP D-HBT driver amplifier with 50 GHz bandwidth and 10 Vpp differential output swing at 40 Gb/s
Yves Baeyens,Nils Weimann,Rose Kopf,P. Roux,Vincent Houtsma,Y. Yang,A. Tate,J. Frackoviak,J.S. Weiner,P. Paschke,Young-Kai Chen +10 more
TL;DR: In this article, a 2-stage differential driver with a lumped input and fully distributed output stage was realized in a 1.2 /spl mu/m emitter double-heterojunction InGaAs/InP HBT technology.
Journal ArticleDOI
Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
Maruf Hossain,Ina Ostermay,Nils Weimann,Franz Josef Schmueckle,Johannes Borngraeber,Chafik Meliani,M. Lisker,Bernd Tillack,O. Krueger,Viktor Krozer,Wolfgang Heinrich +10 more
TL;DR: In this paper, the authors presented the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using indium phosphide (InP)-on-bipolar complementary metaloxide-semiconductor (BiCMOS) technology.
Proceedings ArticleDOI
Process robustness and reproducibility of sub-mm wave flip-chip interconnect assembly
Sirinpa Monayakul,S. Sinha,F.J. Schmuckle,Michael Hrobak,D. Stoppel,Olaf Krüger,B. Janke,Nils Weimann +7 more
TL;DR: In this article, the design margins for sub-mm-wave flip-chip transitions in three different topologies, coplanar-to-coplanar, stripline-tocoplanara, and strip-line-tostripline, were verified with the realization and S-parameter measurement of passive chip assemblies, which contain the same wiring architecture as our InP DHBT integration.
Journal ArticleDOI
NiCr resistors for terahertz applications in an InP DHBT process
D. Stoppel,Ina Ostermay,Michael Hrobak,T. Shivan,Maruf Hossain,Maria Reiner,Nico Thiele,Ksenia Nosaeva,M. Brahem,Viktor Krozer,Sebastian Boppel,Nripendra Halder,Nils Weimann +12 more
TL;DR: In this paper, the authors report on the development of NiCr thin film resistors (TFRs) for application in an Indium Phosphide (InP) Hetero-Bipolar Transistor process.