We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by ...

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

AlGaN/GaN HEMTs-an overview of device operation and applications

Materials research plays a vital role in transforming breakthrough scientific ideas into next-generation technology. Similar to the way silicon revolutionized the microelectronics industry, the proper materials can greatly impact the field of plasmonics and metamaterials. Currently, research in plasmonics and metamaterials lacks good material building blocks in order to realize useful devices. Such devices suffer from many drawbacks arising from the undesirable properties of their material building blocks, especially metals. There are many materials, other than conventional metallic components such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions.

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Alternative Plasmonic Materials: Beyond Gold and Silver

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

A photonic integrated circuit and method of manufacturing the photonic integrated circuit

We demonstrate a single-chip dual-channel monolithically integrated InP coherent receiver photonic integrated circuit with a shared local oscillator port for application to coherent detection of 100G PDM-QPSK signals. The receiver meets performance specifications for 100G over the entire C-band (1530–1570 nm) measured over a temperature range of 20°C up to 90°C.

High-yield manufacturing of InP dual-port coherent receiver photonic integrated circuits for 100G PDM-QPSK application

In this paper, AlGaN/GaN heterostructures grown by plasma-assisted MBE on semi-insulating 6H-SiC Optimization of MBE growth conditions now allows for the routine production of heterostructures with a room temperature mobility of 1400cm/sup 2//Vs at a sheet density of 11/spl times/10/sup 13/cm/sup -2/ We discuss heterostructure designs found to minimize RF dispersion All power data reported is achieved without the use of a SiN surface passivation layer

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High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz

This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based on a third harmonic generation from a fundamental differential cross-coupled topology. The oscillator delivers −8.5 dBm output power. DC consumption is only 28 mW from a 1.5 volts power supply, which corresponds to 0.5 % overall DC-to-RF efficiency. To the authors' knowledge, this is the highest DC-to-RF efficiency harmonic oscillator beyond the 220 GHz frequency band published so far.

http://ieeexplore.ieee.org/iel7/7331835/7345669/07345895.pdf

An efficient 290 GHz harmonic oscillator in transferred-substrate InP-DHBT technology

The effect of polarity on the optical and microstructural properties of GaN is presented. A sample with adjacent domains of Ga- and N-polarity material was grown by varying the nucleation layer. This allows a unique opportunity to study the two different polarities under controlled conditions. We found that the N-polarity material has a much lower dislocation density than the Ga-polarity material. The N-polarity material contains voids that are not present in the Ga-polarity region. The surface roughness of the N-polarity material appears to be caused by Ga-polarity inversion domains which lead the growth. A cathodoluminescence study showed that the N-polarity material is much brighter than the Ga-polarity material, suggesting a higher donor concentration, probably due to increased impurity incorporation in the [0001] growth direction or possibly due to an increase in intrinsic point defects. There is also evidence that the N-polarity region contains two types of material, one is flat and can be etched, the other has an inclined facet and does not etch.

Nils Weimann

Papers

A photonic integrated circuit and method of manufacturing the photonic integrated circuit

High-yield manufacturing of InP dual-port coherent receiver photonic integrated circuits for 100G PDM-QPSK application

High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz

An efficient 290 GHz harmonic oscillator in transferred-substrate InP-DHBT technology

Optical and Microstructural Properties of N- and Ga-Polarity GaN