Nitin Muchhal

Bio: Nitin Muchhal is an academic researcher from Jaypee Institute of Information Technology. The author has contributed to research in topics: Band-pass filter & HFSS. The author has an hindex of 4, co-authored 15 publications receiving 34 citations. Previous affiliations of Nitin Muchhal include Sagar Institute of Science and Technology.

Review of recent trends on miniaturization of substrate integrated waveguide (SIW) components

Abstract: Substrate-integrated waveguide (SIW) is a promising and potential technology for designing and developing millimeter wave and microwave components, circuits and systems. With the rapid advancement of new standards and communication devices and system in past few years, there has been high demand to miniaturize microwave components. This paper briefly discusses some of the techniques that have been accounted in the literature towards size reduction of SIW components. These miniaturization techniques broadly include slotted SIW, Folded SIW (FSIW), HMSIW, Metamaterials etc.

Design of Miniaturized Diamond Shaped Substrate Integrated Waveguide CSRR Band Pass Filter for X Band Applications

Abstract: In this paper, compact substrate integrated waveguide (SIW) band pass filters (BPFs) incorporated with novel diamond shaped complementary split ring resonator (CSRR) are proposed and analyzed using simulation software HFSS. First single stage SIW BPF is analyzed with face to face orientation of outer ring. Thereafter, a two stage filter is analyzed with similar type of orientation. The filters are simulated using substrate material RT Duroid 5880 with relative permittivity of 2.2 and height 0.508 mm. The proposed two stage SIW BPF exhibits highly selective pass band with center frequency of 8.86 GHz with 3-dB bandwidth of 0.74 GHz. It also exhibits one stop band with rejection peak below −60 dB in close proximity to two transmission poles in the pass band. The two stage SIW filter has better selectivity, bandwidth and stop band performance.

Design of miniaturized high selectivity folded substrate integrated waveguide band pass filter with Koch fractal

Abstract: This paper proposes the design of a novel double folded substrate integrated waveguide (FSIW) band pass filter (BPF) based on Koch space-filling curve (SFC). The folded SIW filter is incorp...

Design Of Integrated Circuits For Optical Communications

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Pavement crack image acquisition methods and crack extraction algorithms: A review

Abstract: The extraction of pavement cracks is always a hard task in image processing. In airport and road construction, cracking is the main factor for pavement damage, which can decrease the quality of pavement and affect transportation seriously. Cracks also exist in other artificial or natural objects, such as buildings, bridges, tunnels, etc. Among all the object images, pavement crack images are the most complex, so the image processing and analysis for them is harder than other crack images. From the early image acquisition based on photography technology to the current 3D laser scanning technology, the pavement crack image acquisition technology is becoming more convenient and efficient, but there are still challenges in the automatic processing and recognition of cracks in images. From the early global thresholding to deep learning algorithms, the research for crack extraction has been developed for about 40 years. There are many methods and algorithms that are satisfactory in pavement crack applications, but there is no standard until today. Therefore, in order to know the developing history and the advanced research, we have collected a number of literature in this research topic for summarizing the research artwork status, and giving a review of the pavement crack image acquisition methods and 2D crack extraction algorithms. Also, for image acquisition methods and pavement crack image segmentation, more detailed comparison and discussions are made.

Compact UWB Half-Mode SIW Bandpass Filter With Fully Reconfigurable Single and Dual Notched Bands

Abstract: Compact ultra-wideband (UWB) bandpass filters based on the half-mode substrate integrated waveguide (SIW) with fully reconfigurable single and dual notched bands are proposed in this article. The lower stopband of the UWB bandpass filter is formed by the intrinsic cutoff frequency of the half-mode SIW, and transmission zeros in the upper stopband are created by utilizing three U-shaped slot resonators. Coupling microstrip resonators loaded by varactor diodes are placed along the open side of the half-mode SIW and microstrip feeding line to construct the in-band notches. By controlling the bias voltages and the size of resonators, fully reconfigurable single and dual notched bands can be obtained. Moreover, the frequency and bandwidth of each notched band can be controlled independently. To demonstrate the proposed technique, five and seven distributed coupling microstrip resonators are first applied to obtain the fully reconfigurable single notched band with the suppression level of 30 and 36 dB, respectively. Then, reconfigurable dual notched bands are demonstrated by changing the bias voltages using the same prototype with seven resonators. At last, nine resonant cells with two sets of different sizes are shown to design reconfigurable dual notched bands with frequency tuning range covering almost the full UWB passband.

Versatile, Error-Tolerant, and Easy to Manufacture Through-Wire Microstrip-to-ESIW Transition

Abstract: Empty substrate integrated waveguide (ESIW) technology preserves the many advantages of the SIW, such as low cost, low profile, or integration in a printed circuit board. But, since the fields propagate through the air in the ESIW instead of propagating through a lossy dielectric as in the SIW, the ESIW presents lower losses and higher quality factors in resonators. Several transitions have been recently proposed in the literature that connect the ESIW to a classical planar line such as the microstrip. In all these transitions, both the feeding planar lines and the ESIW are built in the same substrate layer (the height of the ESIW cannot be selected independently), and they are based on tapered structures in the planar line and/or in the ESIW that reduce the compactness of the transition. These transitions also combine metallized and nonmetallized parts, which increases the complexity of the manufacturing process. In this article, a new through-wire microstrip-to-ESIW transition is proposed. The feeding lines and the ESIW are implemented in different layers so that the height of the ESIW can be independently chosen, and higher quality factor ESIW filters can be excited. Besides, this novel transition can be manufactured with simple cuts and with uniform metallization so that the manufacturing complexity is reduced. Finally, it is a very compact transition that can be freely rotated; that is, the angle between the feeding lines and the ESIW does not affect the performance of the transition. This provides a high degree of versatility in the design phase.