We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

http://science.sciencemag.org/content/sci/300/5623/1269.full.pdf

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

II. Structure of Perovskites 1982 A. Crystal Structure 1982 B. Nonstoichiometry in Perovskites 1983 1. Oxygen Nonstoichiometry 1983 2. Cation Nonstoichiometry 1984 C. Physical Properties 1985 D. Adsorption Properties 1986 1. CO and NO Adsorption 1986 2. Oxygen Adsorption 1987 E. Specific Surface and Porosity 1987 F. Thermal Stability in a Reducing Atmosphere 1989 III. Acid−Base and Redox Properties 1990 A. Acidity and Basicity 1990 B. Redox Processes 1991 1. Kinetics and Mechanisms 1992 2. Reduction−Oxidation Cycles 1993 C. Ion Mobility 1993 1. Oxygen Transport 1993 2. Cation Transport 1994 IV. Heterogeneous Catalysis 1995 A. Oxidation Reactions 1995 1. CO Oxidation 1995 2. Oxidation of Hydrocarbons 1996 B. Pollution Abatement 2001 1. NOx Decomposition 2001 2. Exhaust Treatment 2002 3. Stability 2004 C. Hydrogenation and Hydrogenolysis Reactions 2004 1. Hydrogenation of Carbon Oxides 2004 2. Hydrogenation and Hydrogenolysis Reactions 2006

Chemical structures and performance of perovskite oxides.

Photochemical splitting of water into H2 and O2 using solar energy is a process of great economic and environmental interest. Since the discovery of the first water splitting system based on TiO2 and Pt in 1972 by Fujishima and Honda, over 130 inorganic materials have been discovered as catalysts for this reaction. This review discusses the known inorganic catalysts with a focus on structure–activity relationships.

/pdf/inorganic-materials-as-catalysts-for-photochemical-splitting-3aqsdfv0d0.pdf

Inorganic Materials as Catalysts for Photochemical Splitting of Water

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1. When carrier concentration was increased to 4×1018cm−3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10cm2(Vs)−1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group

Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

Noboru Kimizuka

Papers

Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group

Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

The Phase Relations in the In2O3-Al2ZnO4-ZnO System at 1350°C

The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C